Reflection of non-absorbed sub-bandgap photons from TPV cell allows maximizing the efficiency of a TPV system owing to possible reabsorbtion of these photons in the radiator. Back-surface mirror in the developed Ge and GaSb based cells consists of MgF_2 or Si_3N_4 and Au or Ag layers. ...
The negligible response below the bandgap also confirmed low sub-gap states in the ZnTe single crystal. In comparison, the PLM processed ZnTe:O diode exhibits a distinguished band of spectral response centered at 1.8 eV, which exactly has the same spectral overlapping with the enhanced ...
we attributed this sub-bandgap photosensitivity in our device to the electrochemically assisted internal photoemission from graphene to the AgX nanoparticles. As illustrated inFigure 1c, upon illumination with low-energy photons, the photoexcited hot carriers with an energy higher than the Schottky barrie...
Thus, IBSCs can absorb below bandgap photons. The growth of quantum dots in a bulk material is the most common method used to form the intermediate band. However, manufactured QD-IBSCs have low sub-bandgap current due to the low sub-bandgap absorption [5, 6]. The maximum achieved ...
More importantly, the bandgap of the semiconductor nanocrystals (i.e. quantum dots) can be finetuned by varying their sizes at the single-digit nanometer scale (figure 2(b)) [58, 59]. Sub-10 nm gaps can tune physical properties via the strong resonant energy coupling and tunneling of ...
We fabricate Schottky contact photodetectors based on electrically contacted Au nanoantennas on p-Si for the plasmonic detection of sub-bandgap photons in ... M Alavirad,A Olivieri,L Roy,... - 《中国光学快报(英文版)》 被引量: 0发表: 2018年 加载更多来源...
However, Ge target experiments can probe a comparatively lower mass range due to their smaller bandgap energy. 4 Muon \mathbf {(g-2)}: reviving the \mathbf {U(1)_{L_e-L_\mu }} The anomalous magnetic moment of muon \left( a_\mu \equiv (g{-}2)_\mu /2\right) has been ...
Upconversion of near GaAs bandgap photons to GaInP{sub 2} emission at the GaAs/(ordered) GaInP{sub 2} heterojunction The authors have observed upconversion of photoluminescence in several partially ordered GaInP{sub 2} epilayers grown on [100] oriented GaAs substrates. They found that this upconver...
The remaining four subcells that respond to the near-IR photons generate the remaining 50% of the power. The CPV cell that has been presented here has a top-to-bottom subcell bandgap spread of 1.5 eV (i.e., from 2.16 to 0.66 eV) – this is all that is needed to achieve high ...
(a) Energy flow showing solar photons entering the solar cell (Nsun) and sub-bandgap photons (NIR) entering the solar collector. The solar collector generates hot carriers and emits broadened PL (Nup) towards the solar cell. The additional flux of above-gap photons, which have been thermally...