Wavelength-dependent surface photovoltage (SPV) measurements reveal that multiple sub-bandgap states exist in BAPbBr. As the edge height increases, the SPV amplitude at the edges reduces slightly more as compared to the adjacent regions, known as terraces, indicating relatively less reduction in band...
Such narrowband OPDs could significantly benefit from the increased IQE, if photomultiplication would take place also by direct excitation of CT states. However, it is unclear whether direct excitation of CT states can result in a photomultiplication process. Utilizing the intermolecular CT state ...
The Tauc edge supports that the density of states at the bottom of conduction band is proportional to the square root of energy. The Urbach edge is attributed to interband transition caused by smooth microscopic internal fields. The square root of mean-squared internal fields, whose distribution ...
Optical excitation with a sub-bandgap optical power (E ph = 0.95 eV < Eg,Si = 1.12 eV) is applied over the MOSFETs and the gate-induced drain leakage (GIDL) current, named the optically-induced GIDL, and the energy distribution of interface states in the gate-to-drain overlapped region ...
Increasing the QD size also allows additional IB states within the forbidden band; thus, the interband photocurrent increases with QD size. The interband photocurrent density for 10 nm and 16 nm QD widths is 0.39 mA/cm2 and 0.99 mA/cm2, respectively. 1 Introduction The efficiency of ...
SPIE Proceedings [SPIE SPIE Optical Engineering + Applications - San Diego, California, United States (Sunday 17 August 2014)] Ultrafast Nonlinear Imaging ... In recent years it has become possible to generate terahertz-frequency (THz) fields that are strong enough to induce nonlinear responses in...
The increase in temperature adds kinetic energy to the charge carriers, leading to voltage loss due to the decrease in bandgap energy and from heat dissipation in the solar cell, which also contributes to an increase in defects and more phonons states that absorb that energy. This, in turn, ...
The Fe 3d states are located at lower energy and result in a narrow bandgap in comparison with that of the isostructural Sr3Sc2O5Cu2S2.Chinese Physics BHan Zhang 张韩Shifeng Jin 金士锋Liwei Guo 郭丽伟Shijie Shen 申士杰Zhiping Lin 林志萍...
Study of Band-Gap States in CVD Diamond Using Sub-Band-Gap Illumination Band-gap states in nominally undoped CVD diamond films have been studied using sub-band-gap illumination with photon energy ranging from 2.4 to 3.53 eV. It... G Bo,C Kerlit,Q Zhang,... - 《Physica Status Solidi》...
where n (ω) is the Bose factor, M is electron-phonon matrix element, Eext = 2.412 eV is the incident photon energy, is 1LO phonon energy, Eg denotes the optical bandgap and Γ represents the width of the electronic states. After subtracting the PL background, the integrated inte...