Wavelength-dependent surface photovoltage (SPV) measurements reveal that multiple sub-bandgap states exist in BAPbBr. As the edge height increases, the SPV amplitude at the edges reduces slightly more as compared to the adjacent regions, known as terraces, indicating relatively less reduction in band...
Such narrowband OPDs could significantly benefit from the increased IQE, if photomultiplication would take place also by direct excitation of CT states. However, it is unclear whether direct excitation of CT states can result in a photomultiplication process. Utilizing the intermolecular CT state ...
The Tauc edge supports that the density of states at the bottom of conduction band is proportional to the square root of energy. The Urbach edge is attributed to interband transition caused by smooth microscopic internal fields. The square root of mean-squared internal fields, whose distribution ...
The electronic states on a clean surface in a vacuum are known as surface states, while those on a surface in contact with another material are known as interface states. In addition, the electronic states may be intrinsic, owing to the displacement of the host atoms of the two materials, ...
It is shown that SPV spectra are formed as a result of the simultaneous action of both surface states and deep bulk levels. The spectral shape of the surface-state photoionization cross-section is qualitatively determined. The influence of the deep bulk levels on the SPV spectra is explained, ...
Optical excitation with a sub-bandgap optical power (E ph = 0.95 eV < Eg,Si = 1.12 eV) is applied over the MOSFETs and the gate-induced drain leakage (GIDL) current, named the optically-induced GIDL, and the energy distribution of interface states in the gate-to-drain overlapped region ...
Increasing the QD size also allows additional IB states within the forbidden band; thus, the interband photocurrent increases with QD size. The interband photocurrent density for 10 nm and 16 nm QD widths is 0.39 mA/cm2 and 0.99 mA/cm2, respectively. 1 Introduction The efficiency of ...
echelles A6180B Ultraviolet, visible and infrared radiation effects A7830L Infrared and Raman spectra in disordered solids A7835 Brillouin and Rayleigh scattering other light scattering (condensed matter) A6350 Vibrational states in disordered systems B2520F Amorphous and glassy semiconductors B0570 Glas...
where n (ω) is the Bose factor, M is electron-phonon matrix element, Eext = 2.412 eV is the incident photon energy, is 1LO phonon energy, Eg denotes the optical bandgap and Γ represents the width of the electronic states. After subtracting the PL background, the integrated inte...
SPIE Proceedings [SPIE SPIE Optical Engineering + Applications - San Diego, California, United States (Sunday 17 August 2014)] Ultrafast Nonlinear Imaging ... In recent years it has become possible to generate terahertz-frequency (THz) fields that are strong enough to induce nonlinear responses in...