sub-bandgap excitationSI-LECsurface electric fieldchemical treatmentssurface state densityshallow impuritiesimpurity absorptionA novel variation of photoreflectance, where the modulating beam has a photon energy that is smaller than the bandgap of the semiconductor, has been performed on SI-LEC grown ...
(QDs) have been extensively investigated over the past two decades due to their unique advantages such as size/composition-dependent PL properties, chemical and thermal stabilities, high photoluminescence quantum yields (PLQY), and narrow emission peaks with a broad excitation wavelength range [[1],...
When -5 V are applied to the device, the entire EQE spectrum of the PM-OPD surpasses that of the pin-photodiode, confirming that direct excitation of CT states can also trigger the photomultiplication process in these devices. Fig. 4: Photomultiplication in the CT region and used in ...
Since ZnTe single crystal has a low deep-level trap density, the fast PL decay component is hardly pronounced as the traps saturate very quickly even under low excitation power. High dose oxygen implantation (1016 cm−2) is expected to generate high density traps over 1021 cm−3 ...
Sub-bandgap photodetection with two-dimensional electron-confinement in CdZnO-MgZnO heterojunction is realized. The reported photodetection is based on metal-less internal photoemission via optical excitation in 2D electron gas (2DEG) present at the bottom of the conduction band offset in the ...
Study of sub-bandgap photo-induced absorption in a-Si:H using excitation spectroscopy in a waveguide configuration The photo-induced absorption of λ = 1.3 μm light in an a-Si:H based waveguide is studied by means of excitation spectroscopy. At very high levels of the ... M Zelikson,K...
Electrical Characteristics of InAlAs/InGaAs/InAlAs Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation 来自 Semantic Scholar 喜欢 0 阅读量: 24 作者:HT Kim,DM Kim 摘要: Electrical gate and drain characteristics of double heterostructure InAlAs/InGaAs pseudomorphic HEMTs ...
3.1.3. Internal Photoemission Absorption (IPA) Internal photoemission is the optical excitation of electrons in the metal to energy above the Schottky barrier and then transport of these electrons to the conduction band of the semiconductor (Figure 3). Figure 3. Energy band diagram for a metal/...
(black line for 470-nm SiO2and brown line for 200-nm SiO2, right axis). All of the data were normalized to the responsivity at 400 nm. (c) Absorption intensity map for AgCl-G as a function of both the excitation wavelength and the SiO2thickness. (d) The calculated absorption of ...
Optical excitation with a sub-bandgap optical power (E ph = 0.95 eV < Eg,Si = 1.12 eV) is applied over the MOSFETs and the gate-induced drain leakage (GIDL) current, named the optically-induced GIDL, and the energy distribution of interface states in the gate-to-drain overlapped region ...