In another version the channel stop termination is an additional trench formed in the termination region of the MOSFET. The trench is conventionally lined with oxide and filled with a conductive polysilicon field plate which extends to the edge of the die. In another version, the doped and ...
Analysis of PowerMOSFET chips failed in thermal instability Recent developments in power electronics foresee the extensive use of new-generation low-voltage Power MOSFETs also in the thermally unstable portion of th... A Castellazzi,H Schwarzbauer,D Schmitt-Landsiedel - 《Microelectronics & Reliability...
Design and fabrication of 4H silicon carbide MOSFETs. The 4H-SiC power MOSFET is an excellent candidate for power applications. Major technical difficulties in the development of 4H-SiC power MOSFET have been ... J Wu - Rutgers The State University of New Jersey - New Brunswick. 被引量: 0...
Thermal resistance measurement and failure analysis of Multi-discrete SiC MOSFET System Module for power device, the aging of external connection layer can also cause an increase in thermal resistance, resulting in the rise of junction temperature. ... YC Ji,JN Wang,DL Zhang,... - IEEE Interna...
Fabrication method of trenched power mosfet A fabrication method of a trenched power MOSFET is provided. A pattern layer having a first opening is formed on a substrate. A portion of the substrate is removed, using the pattern layer as a mask, to form a trench in the substrate. A ......
PURPOSE:To provide a method by which a semiconductor device provided with a highly reliable normally-on type vertical power MOSFET having stable characteristics can be manufactured at a low cost with high yield. CONSTITUTION:After forming a channel area 12 and source area 13 on the surface of a...
例如,提供具有SiGe源极的沟槽栅功率MOSFET装置,其中,SiGe源极通过减小体或阱区域中的空穴电流来减小寄生npn晶体管增益,从而降低闭锁状态的可能性. For example, there is provided a trench-gate power MOSFET device having a SiGe source, wherein, SiGe source to reduce the gain of the parasitic npn ...
An optimized gate-enhanced (GE) power UMOSFET with split gate (SGE-UMOS) is proposed. This device shows the reduction in specific on-state resistance $(R_{rm sp})$ at a breakdown voltage of 119 V as compared to the gradient oxide-bypassed (GOB) UMOS and GE-UMOS devices, which is du...
Simulation Study of Single-Event Burnout for the 4H-SiC VDMOSFET with N+ Split Source Silicon Carbide (SiC) power MOSFET is the next generation device in the supply system of spacecraft. However, the current degradation or catastrophic failure of the power device could be induced when a drain...
Utilizing HfO2 with high-K dielectric in the source side, improves the coupling of the gate to the source-body junction, which results in the increase of on-state current [24]. For significant increase of on-current in the device a thin MOSFET has embedded underneath the channel. In ...