In another version the channel stop termination is an additional trench formed in the termination region of the MOSFET. The trench is conventionally lined with oxide and filled with a conductive polysilicon field plate which extends to the edge of the die. In another version, the doped and ...
Thermal resistance measurement and failure analysis of Multi-discrete SiC MOSFET System Module for power device, the aging of external connection layer can also cause an increase in thermal resistance, resulting in the rise of junction temperature. ... YC Ji,JN Wang,DL Zhang,... - IEEE Interna...
A new lateral power MOSFET for smart power ICs: the "LUDMOS concept" In this paper, a new concept of lateral DMOSFET for medium voltage (<100V) smart power integrated circuits is proposed. These structures present a trench i... M Zitouni,F Morancho,H Tranduc - 《Microelectronics Journal...
For the first time, power FETs with integral Schottky diodes are reported which have resulted in significant enhancement in the reverse recovery characteristics of the parasitic body p-n junction diode of a conventional power MOSFET.> 展开
Analysis of PowerMOSFET chips failed in thermal instability Recent developments in power electronics foresee the extensive use of new-generation low-voltage Power MOSFETs also in the thermally unstable portion of th... A Castellazzi,H Schwarzbauer,D Schmitt-Landsiedel - 《Microelectronics & Reliability...
Optimized JFET regions of 4H-SiC VDMOS with reduced on-resistance and improved gate oxide reliability SiC is an attractive semiconductor for high power applications and the vertical double-diffused MOSFET (VDMOS) is a promising structure for SiC power devic... L Zheng,Q Wang,X Cheng,... - 《...
In this paper, a novel trench power MOSFET using a Separate-W-gated technique MOSFET (SWFET) is proposed. Because the SWFET has a very low compared to other forms of technology, it can be applied to high-speed power systems. The results found that the SWFET-applied was decreased by 40...
Simulation Study of Single-Event Burnout for the 4H-SiC VDMOSFET with N+ Split Source Silicon Carbide (SiC) power MOSFET is the next generation device in the supply system of spacecraft. However, the current degradation or catastrophic failure of the power device could be induced when a drain...
Tiny power MOSFET drivers improve efficiency The first members of Microchip's family of power MOSFET drivers, the 500-mA MCP14A005X and the 1.5-A MCP14A015X, are housed in small SOT23 and 2x2-mm DFN p... S Nordyk - 《Mosfet Driver Power Mcu Controller Microchip Technology》 被引量: ...
例如,提供具有SiGe源极的沟槽栅功率MOSFET装置,其中,SiGe源极通过减小体或阱区域中的空穴电流来减小寄生npn晶体管增益,从而降低闭锁状态的可能性. For example, there is provided a trench-gate power MOSFET device having a SiGe source, wherein, SiGe source to reduce the gain of the parasitic npn ...