Application of IGBTs Details Comparison of Forward Characteristics of IGBTs and MOSFETs Details Comparison of Transistors by Structure Details Datasheets of MOSFET: Maximum Ratings Details Datasheets of MOSFET: Capacitance and Switching Characteristics Details Datasheets of MOSFET: Body Diode Details ...
In this paper electrical characteristics of Strained Double Gate Metal Oxide Semiconductor Field Effect Transistor(DG MOSFET) and that of Conventional Double Gate MOSFET were investigated. A quantum mechanical transport approach based on non-equilibirium Green's function(NEGF) method in the frame work...
The SCE is a trigger to diminish the electrical characteristics of a MOSFET device and by introducing this buried oxide layer, it can suppress this SCE. With SCE suppressed by buried oxide layer, electrical characteristics of an MOSFET can be improved; thus the performance of the device can ...
Using MEDICI simulator,a series of electric characteristics of Ge-MOSFET with ultrathin high-k gate dielectrics was studied.With short channel-length effect and fringe field effect taken into consideration,impact of gate dielectric constant,fixed oxide charge area density and channel length on threshold...
Electrical Characteristics of SiGe pMOSFET Devices with Tantalum or Titanium Oxide Higher-k Dielectric Stack. Solid-State Electron. 2012, 78, 17-21.
Metal Oxide Semiconductor Field Effect Transistors (MOSFET) play an important role in electronic industry development. To improve the electrical characteristics of these transistors in this paper, a new structure is proposed to reduce floating body effect, lattice temperature, and short channel effects....
利用紫外曝光光刻技术和精简的半导体加工工艺,用一步光刻制备了以HfO_2为高κ栅介质,NiGe为肖特基源、漏极的Ge-pMOSFET器件,并在栅极中引入厚度1 nm的Si层对HfO_2和Ge接触界面进行了钝化处理.器件的电学特性测试结果表明,Si钝化效果显著,不仅可确保HfO_2有较高的κ值(22),约为钝化前(κ=10)的两倍,还提高了...
摘要: The integration of high-κ dielectrics in MOSFET devices is beset by many problems. In this paper a review on the impact of defects in high-κ materials on the MOSFET electrical characteristics is prese关键词: Ultrasound Contrast agents Microbubbles Modeling Attenuation and phase velocity ...
Figure 3.(a) Output characteristics of MOSFET; (b) transfer curve (c) (−IDS)-VGScharacteristics on a logarithmic scale. The capacitance voltage (CV) characteristics were measured at a frequency of 1 MHz, as displayed inFigure 4a.VGSswept from 18 to −10 V and −10 to 18 V for ...
MOSFET的电气特性(电荷特性Qg/Qgs1/Qgd/QSW/QOSS) 栅极电荷 由于MOSFET的栅极(G)输入端子是绝缘的,因此从栅极看到的电荷量Q是重要特性。图1.5展示了栅极电荷特性的定义。 总栅极电荷Qg 向栅极施加电压(从零电压到指定电压)的电荷量 栅极-源极电荷1 Qgs1 ...