The C-V and I-V characteristics of an n-MOSFET with Si-implanted gate-SiO/sub 2/ of 50 nm are analyzed by using a test device with large equal channel width and length of 100 /spl mu/m, and discussed for realizing a large hysteresis window of threshold voltage. Interface trap ...
at room tempe rature, small fract ure surfa ces of ano ther kind on the bottom of [translate] afuckyoumather fuckyoumather translate] athe structure of the MOSFET not be uniform due to process variations MOSFET的结构可能不是制服由于处理变异 [translate] 英语翻译 日语翻译 韩语翻译 德语...
Semiconductor structure for a transistor (claimed) e.g. 补全金属氧化物半导体 (CMOS) 晶体管和MOSFET。 相关内容 aSchraubverbindungen 螺栓连接[translate] athese setting are unknown to this version of the setting browser 这些设置是未知的到设置浏览器的这个版本[translate] ...
Semiconductor sensorHall effectSOI structuretechnologysimulationResults of the magnetosensitive device (a MOSFET Hall sensor on the SOI structure) manufacturing ... L Dolgiy,I Lovshenko,V Nelayev,... - International Conference Mixed Design of Integrated Circuits & Systems-mixdes 被引量: 2发表: 0...
A process for fabricating SRAM cells, including MOSFET devices, as well as thin film transistor structures, has been developed. The process features self-alignment of the MOSFET polysilicon gate structure to the polysilicon gate structur... JY Lee,SG Wuu - US 被引量: 17发表: 1997年 A 65nm...
MOSFET is a FET with an insulated gate where voltage determines conductivity of the device and is used for switching or amplifying signals.
A CMOSFET structure is provided, which can control the threshold voltage of the device by a stacked gate structure. The CMOSFET structure includes a silicon substrate (1001), SiO2 interfacial layers (1003a, 1003b) grown on the silicon substrate (1001), first high-k gate dielectric layers (...
The theoretical study of a novel Si/SiGe structure combining the advantages of buried channel MOS devices and conventional SiGe FET's is presented. A self-consistent one-dimensional Schrodinger-Poisson simulator has been developed to evaluate the gate dependence of electron effective mobility in the ...
Utilizing HfO2 with high-K dielectric in the source side, improves the coupling of the gate to the source-body junction, which results in the increase of on-state current [24]. For significant increase of on-current in the device a thin MOSFET has embedded underneath the channel. In ...
aSemiconductor structure for MOSFET, has single well formed in contact with part of back gate of n-type double gate transistor and part of back gate of p-type double gate transistor, where gates are doped with same doping agent 半导体结构为MOSFET,有唯一合格与一部分的n类型双门晶体管后面门和...