The C-V and I-V characteristics of an n-MOSFET with Si-implanted gate-SiO/sub 2/ of 50 nm are analyzed by using a test device with large equal channel width and length of 100 /spl mu/m, and discussed for realizing a large hysteresis window of threshold voltage. Interface trap ...
astrong ly brit tle fracture even at room tempe rature, small fract ure surfa ces of ano ther kind on the bottom of[translate] afuckyoumather fuckyoumather[translate] athe structure of the MOSFET may not be uniform due to process variations MOSFET的结构可能不是制服由于处理变异[translate]...
aSemiconductor structure for MOSFET, has single well formed in contact with part of back gate of n-type double gate transistor and part of back gate of p-type double gate transistor, where gates are doped with same doping agent 半导体结构为MOSFET,有唯一合格与一部分的n类型双门晶体管后面门和一...
The n-MOSFET having the single-sided gate contact and ground-shielded pad showed the F/sub min/ of 0.46 dB and 0.37 dB at 2 GHz with the drain current of 2.0 mA and 5.3 mA, respectively. Furthermore, the weak frequency dependency of the F/sub min/ showed a great possibility of a ...
A process for fabricating SRAM cells, including MOSFET devices, as well as thin film transistor structures, has been developed. The process features self-alignment of the MOSFET polysilicon gate structure to the polysilicon gate structur... JY Lee,SG Wuu - US 被引量: 17发表: 1997年 A 65nm...
Here, a planar MOSFET is used to describe the operation of a MOSFET. The structure of the latest trench-gate MOSFET (U-MOS) is also shown below.
Utilizing HfO2 with high-K dielectric in the source side, improves the coupling of the gate to the source-body junction, which results in the increase of on-state current [24]. For significant increase of on-current in the device a thin MOSFET has embedded underneath the channel. In ...
Finally, calculated retention characteristics of the capacitance is compared to the measured one and leakage current characteristics required to obtain 10 years of retention time are estimated. 展开 关键词: Practical/ dielectric polarisation ferroelectric devices ferroelectric storage MOSFET work function/ ...
Methyl silicon oil is used as a base, highly heat-conductin... 何建,方亮,李赟,... 被引量: 2发表: 2011年 Packaging structure of a SiC MOSFET power module and manufacturing method thereof The invention discloses a packaging structure and manufacturing method of a SiC MOSFET module, which ...
Semiconductor structure for a transistor (claimed) e.g. 补全金属氧化物半导体 (CMOS) 晶体管和MOSFET。 相关内容 aSchraubverbindungen 螺栓连接[translate] athese setting are unknown to this version of the setting browser 这些设置是未知的到设置浏览器的这个版本[translate] ...