The C-V and I-V characteristics of an n-MOSFET with Si-implanted gate-SiO/sub 2/ of 50 nm are analyzed by using a test device with large equal channel width and length of 100 /spl mu/m, and discussed for realizing a large hysteresis window of threshold voltage. Interface trap ...
astrong ly brit tle fracture even at room tempe rature, small fract ure surfa ces of ano ther kind on the bottom of[translate] afuckyoumather fuckyoumather[translate] athe structure of the MOSFET may not be uniform due to process variations MOSFET的结构可能不是制服由于处理变异[translate]...
Semiconductor structure for a transistor (claimed) e.g. 补全金属氧化物半导体 (CMOS) 晶体管和MOSFET。 相关内容 aSchraubverbindungen 螺栓连接[translate] athese setting are unknown to this version of the setting browser 这些设置是未知的到设置浏览器的这个版本[translate] ...
The n-MOSFET having the single-sided gate contact and ground-shielded pad showed the F/sub min/ of 0.46 dB and 0.37 dB at 2 GHz with the drain current of 2.0 mA and 5.3 mA, respectively. Furthermore, the weak frequency dependency of the F/sub min/ showed a great possibility of a ...
This work was devoted to the development of a Ge quantum dot memory structure of a MOSFET type with laterally ordered Ge quantum dots within the gate dielectric stack. Lateral ordering of the Ge dots was achieved by the combination of the following technological steps: (a) use of a focused ...
A method is provided for a planar surface of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A conductive layer is formed over a substrate. A silicon nitride layer is formed over the conductive layer. A photoresist layer is then formed and patterned ...
MOSFET is a FET with an insulated gate where voltage determines conductivity of the device and is used for switching or amplifying signals.
A process for fabricating SRAM cells, including MOSFET devices, as well as thin film transistor structures, has been developed. The process features self-alignment of the MOSFET polysilicon gate structure to the polysilicon gate structur... JY Lee,SG Wuu - US 被引量: 17发表: 1997年 A 65nm...
Utilizing HfO2 with high-K dielectric in the source side, improves the coupling of the gate to the source-body junction, which results in the increase of on-state current [24]. For significant increase of on-current in the device a thin MOSFET has embedded underneath the channel. In ...
A CMOSFET structure is provided, which can control the threshold voltage of the device by a stacked gate structure. The CMOSFET structure includes a silicon substrate (1001), SiO2 interfacial layers (1003a, 1003b) grown on the silicon substrate (1001), first high-k gate dielectric layers (...