In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage (BVDS) and on-state current (ID,MAX), are ...
SCI 40V 7.5A Power MOSFET 数据手册说明书 © Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev. 2 1 Publication Order Number:NTMS5838NL/D NTMS5838NL Power MOSFET 40 V, 7.5 A, 20 m W Features •Low R DS(on)•Low Capacitance •Optimized Gate Charge • These...
MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices...
Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 2.1 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 - - V Zero Gate Voltage Drain Cur...
国际Rectifier HEXFET Power MOSFET 产品说明书
• Power MOSFET Electrical Characteristics –Electrical Parameter Definition And Measurement –Safe Operation Criteria • Quality Control In Mass Production –Wafer Level –Finished Goods –Reliability • Static Characteristics • V TH / BV
1NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.General Features ● V DS =30V,I D =150A R DS(ON) <4.0 m Ω ...
MOSFET - Power, Single N-Channel, PQFN8 5x6 150 V, 11.5 mW, 78 A NTMFS011N15MC Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, ...
MMDF1N05E Power MOSFET 1 Amp, 50 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a low ...
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 0.9 mW, 273 A NVMFWS0D9N04XM Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable ...