A 1-dimensional physical model for the current-voltage (I–V) characteristics of the MOSFET device is developed. The significant contribution of this model is that it includes for quantum mechanical (QM) effects near the interface, matched asymptotic methods are used to solve the DG equation.; ...
The current-voltage characteristics of nanoscale silicon n-channel MOSFET with 50 nm channel length are calculated in the present study. Both the electron and hole transport are simulated by means of the ensemble Monte Carlo method. The importance of electron impact ionization process in the ...
Optimization of Drain Current and Voltage Characteristics for DP4T Double-Gate RF CMOS Switch at 45-nm Technology45-nm technologySingle-gate MOSFETDouble-gate MOSFETDP4T switchRadio frequencyRF switchCMOSVLSIIndependent gate control in double-gate devices enhances the circuit performance and robustness ...
Quantum mechanical effects correction models for inversion charge and current-voltage (I-V) characteristics of the MOSFET device Analytic 1-D quantum mechanical effects correction formulae for the MOSFET inversion charge and I-V characteristics are derived from the density gradient (... H Abebe,E ...
Scaling Limit of the MOS Transistor : A Ballistic MOSFET The current voltage characteristics of the ballistic metal oxide semiconductor field effect transistor (MOSFET) is reviewed. Reducing the carrier scattering by employing e. g. the intrinsic channel structure and the low temperature opera... NAT...
The reduced dependency of the subthreshold current on the gate length is also explained. Introduction As the dimensions of MOSFET devices are continually scaled down, many physical effects in short channel devices, such as punchthrough, threshold voltage lowering, subthreshold leakage current, and ...
The drain current versus gate-to-source voltage characteristics is shown in Figure, the FET should be ( ). A、Enhancement-mode NMOSFET B、Enhancement
Anomalous effects on the current‐voltage characteristics ofp‐channel metal‐oxide‐semiconductor transistors in the temperature range 4.2–50 K Abstract The current‐voltage characteristics of p‐channel MOSFETs (metal‐oxide‐semiconductor field‐effect transistors) in the temperature range 4.2‐5... AG...
We have investigated the drain current-drain voltage characteristics and the spectral noise intensity of the drain current of (111) n-channel MOSFET's at T = 4.2 K. At T = 4.2 K the drain current-drain voltage characteristics showed a hysteresis which was not observed at T =77 K and at...
This chapter discusses the use of power metal–oxide–semiconductor field-effect transistor (MOSFETS) in creating current sources. An important power MOSFET characteristic regarding its maximum operating voltage is the drain-to-source breakdown voltage. Due to the continued R&D of silicon power MOSFET ...