CharacteristicsSymbolTest ConditionsMinTypMaxUnit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V — — ±0.1 µA Drain cut-off current IDSS VDS = 40 V, VGS = 0 V — — 10 Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VG...
Hu, "Electrical characteristics of MOSFET's using low-temperature chemical-vapor-deposited oxide," IEEE Electron Device Lett., vol. 9, no. 7, p. 324, 1988.J. Lee , I.-C. Chen and C. Hu "Electrical characteristics of MOSFET\'s using low-temperature chemical-vapor-deposited oxide",...
This thesis also includes the study that has been performed regarding the electrical characteristics of high frequency semiconductor devices in terms of I-V characteristics and Noise Power Spectral Density (PSD) Analysis with respect to drain current fluctuation in the semiconductor devices. The ...
The SCE is a trigger to diminish the electrical characteristics of a MOSFET device and by introducing this buried oxide layer, it can suppress this SCE. With SCE suppressed by buried oxide layer, electrical characteristics of an MOSFET can be improved; thus the performance of the device can ...
MOSFETnumerical simulationIn this paper, electrical characteristics of metal-oxide-semiconductor field effect transistor (MOSFET) with silicon/gallium-arsenic (Si/GaAs) stacked film are numerically studied. By calculating several important device characteristics, such as the on-state current, the ...
Using MEDICI simulator,a series of electric characteristics of Ge-MOSFET with ultrathin high-k gate dielectrics was studied.With short channel-length effect and fringe field effect taken into consideration,impact of gate dielectric constant,fixed oxide charge area density and channel length on threshold...
This paper describes the basic concept, device structures and electrical characteristics of this strained-SOI MOSFET. After summarizing the electronic properties of strained-Si films and current status of strained-Si MOSFETs in Section 2, the concept and the advantages of strained-SOI MOSFETs are desc...
Metal Oxide Semiconductor Field Effect Transistors (MOSFET) play an important role in electronic industry development. To improve the electrical characteristics of these transistors in this paper, a new structure is proposed to reduce floating body effect, lattice temperature, and short channel effects....
期刊名称:《SAE International Journal of Passenger Cars - Electronic and Electrical Systems》|2017年第1期 38.Solder Void Modeling and Its Influence on Thermal Characteristics of MOSFETs in Automotive Electronics Module 机译:焊料void建模及其对汽车电子模块MOSFET热特性的影响 ...
Superior hole-mobility and compatibility with mainstreamSiprocessing technology make strainedSiGean attractive channel material forp-MOSFET. In this paper, the electrical characteristics of strainedSi1-xGexchannelp-MOSFET with variousGemol fraction are studied via 2-D numerical simulation by ISE TCAD ...