PURPOSE: To increase the yield by ranking silicon diode elements based on the degree of a curve in the temperature/voltage characteristics, combining silicon diode elements having characteristic curves offsetting each other and connecting them in series. ;CONSTITUTION: A silicon diode element 2 set ...
Fig. 2.Static characteristic of a 1200V–15A–300mΩ JFET from SiCED, for two ambiant temperatures: (a) 25°C and (b) 225°C. Curves where acquired using a Tektronix 371 curve tracer in pulse mode with gate-to-source voltages ranging from 0 to −18V in −2V steps. ...
Zener diodes: A Zener diode is a type of semiconductor diode that is specifically designed to operate in the reverse breakdown region, where it exhibits a well-defined and stable reverse breakdown voltage, also known as the Zener voltage. This characteristic allows Zener diodes to be used as vo...
In this paper we analize the illuminated I-V family curves of the single crystal n/p silicon solar cells obtained in our laboratory. It is demonstrated that through the correction of the higher slope region from the Voc vs ln Isc curve, experimental values of the diffusion current, with gre...
Nanoindentation load-displacement curves of Ge are not as characteristic as in Si. The only feature discussed in the literature is the formation of numerous small discontinuities (“pop-ns”) in the upper portion of the loading curve (Fig. 30a). As Ge is known to be very prone to radial ...
Moreover, on photoexcitation, the graphene–silicon hybrid film transmits the terahertz waves when biased with a positive voltage, whereas it blocks the wave when biased with a negative voltage, resembling the characteristic of a typical semiconductor-based electronic diode that allows passage of ...
(1) the need for operating at cryogenic temperature13,14 and (2) the incompatibility with complementary metal–oxide–semiconductor (CMOS) fabrication processes15,16—so far, to our knowledge, only Si-based single-photon avalanche diode (SPAD)17,18 has gained mainstream success and has been ...
the pulsed threshold current density at 25°C for 5-layers was 90A/cm2, a little lower than the 8-layer 99A/cm2threshold. However, the 5-layer laser diode only reached 120°C before failing to lase. The T0characteristic was also reduced from infinity for the 8-layer device in the 15...
at a different energy as well as with a small width (like levels encountered when we deal with the elementary concept of particle in a box). The system is called resonant-tunneling diode (RTD), which is effectively a diode in which electrons can tunnel through some resonant states at ...
temperaturecurrent-voltage(J-V)characteristicsofasilicondiodeThematerialchangesfromthelifetimetotherelaxationregimewhenthetemperatureisdecreasedfrom300to14KAchangeintheshapeoftheJ-Vcurve,manifestedbyincreasedconductanceatlowbias,isobservedandisingoodagreementwithrecenttheoreticalmodelingofminority-carrierbehaviorin...