LED is an abbreviation for light-emitting diode, which is used in all types of semiconductor diodes with electrical properties similar to a PN junction diode. The LED V-I characteristic is as follows: V-I Characteristics of LED V-I Characteristics of PN Junction Diode A PN junction diode is...
The physicochemical characteristics of the magnetite talc (Fe3O4@Talc) nanocomposite were investigated. The surface structure of the investigated adsorbent was conducted via scanning electron microscopy (SEM) on a Thermo Scientific Quattro ESEM (Thermo Fischer, Waltham, MA, USA). Thermal stability was...
A P-N junction diode is a piece of silicon that has two terminals. One of the terminals is doped with P-type material and the other with N-type material. The P-N junction is the basic element for semiconductor diodes. A Semiconductor diode facilitates the flow of electrons completely in ...
Signatures of differential Log R-V characteristics for non-uniformity analysis of HgCdTe infrared photodiode arrays In continuation to our research on the non-uniformity in infrared focal plane arrays of HgCdTe photodiodes, we have examined and found a few important sign... RS Saxena,A Saxena - ...
The silicon diode, as a temperature-sensing device, is built on a thin cantilever structure that is formed by micromachining. The thickness of the cantilever is about 5 μm. A thin layer of bismuth is evaporated on the cantilever as an infrared radiation absorber. With a cantilever measuring ...
8. The method of claim 7 wherein: the III-V buffer layer is a GaAs buffer layer; the II-VI buffer layer is a buffer layer including Zn and Se; the method further includes providing an electron diffraction system to monitor structural characteristics of the semiconductor layers grown in...
The characteristics of Cr(VI), Cu(II), Pb(II) and Cd(II) in the GO-NH2 adsorption processes were analyzed using the Langmuir and Freundlich isotherm models. The adsorption processes of Pb(II) and Cd(II) on GO-NH2 were fit by the Langmuir model. The Freundlich isotherm model was well...
* Ultra-high-efficient N-type silicon heterojunction solar cells - higher efficiency and power output than conventional crystalline silicon cells * HJT guarantee a higher energy yield of up to 700W from its front surface alone at an excellent efficiency of up to...
Signatures of differential Log R-V characteristics for non-uniformity analysis of HgCdTe infrared photodiode arrays In continuation to our research on the non-uniformity in infrared focal plane arrays of HgCdTe photodiodes, we have examined and found a few important sign... RS Saxena,A Saxena - ...
* Ultra-high-efficient N-type silicon heterojunction solar cells - higher efficiency and power output than conventional crystalline silicon cells * HJT guarantee a higher energy yield of up to 700W from its front surface alone at an excellent efficiency of up t...