Low temperature current - voltage characteristics of silicon diodes used as thermometerslow temperature electronicstemperature measurementdiode thermometersWith the aim of the determination of an optimum value of the forward current for diode thermometers, the V versus I characteristics of two types of ...
This paper will present recent results including a comparison with state of the art silicon diodes. The effect of diode reverse recovery on the turn-on losses of a fast Si IGBT are studied both at room temperature and at 150°C. At room temperature, SiC diodes allow a reduction of IGBT ...
This study investigated the characteristics of a new shielded diode detector, microSilicon X (model 60022: MSX), for small‐field and large‐field dosimetry. The percent depth dose (PDD), beam profiles, detector output factor (OFdet), temperature dependence, dose rate dependence, dose﹑er﹑ul...
作者: LS Lovinskii 摘要: Methods, measurement results, and mechanisms for the temperature dependence of the spectral sensitivity of silicon photodiodes in the ultraviolet region are examined. 关键词: laser stabilization frequency control frequency drift DOI: 10.1023/A:1010928626546 年份: 2000 收藏...
Silicon carbide Schottky barrier diodes (SiC SBDs) are poised to replace silicon PIN diodes as a new choice for the high power and high frequency applications. However, SiC SBDs suffer from ringing which may induce additional power losses when applied in chopper circuit, regarded as the interactio...
terminal. This type of construction in the signal diode is mostly preferred to get better predictions on its parameters. Apart from that, this type of construction makes it more reliable, and to protect the diode from oxidation generally a layer of silicon oxide or a passivated glass is used....
Charge Retention Characteristics of Silicide-Induced Crystallized Polycrystalline Silicon Floating Gate Thin-Film Transistors for Active Matrix Organic Light-Emitting Diodedoi:info:doi/10.1166/jnn.2013.8266Park, Jae HyoSon, Se WanByun, Chang WooKim, Hyung Yoon...
Effect of ultrasonic treatment of silicon IMPATT diodes, power Schottky diodes and Zener diodes on their electrical characteristics Ultrasonic treatment of packaged silicon IMPATT diodes and power Schottky diodes is performed. It results in both a substantial reduction of the diode reve... Tagaev M....
For germanium diodes, VK is approximately 0.3 V, and 0.7 V for silicon. If the value of IF increases much beyond VK, the forward current becomes quite large.This operation causes excessive heat to develop across the junction and can destroy a diode. To avoid this situation, a protective ...
Characteristics of Aluminum Silicon Schottky Barrier Diode ; Solid State Electronics, Pergamon Press, 1970, vol. 13, pp. 97 104 (Gr. Britain); A.Y.C. Yu and C.A. Mead.A. Y. C. Yu and C. A. Mead, "Characteristics of Aluminum-Silicon Schottky Barrier Diode," Solld-State Electronics...