S.N. Musaeva[1]Azerbaijan Technical University Baku AZ1073 AzerbaijanE.A. Kerimov[2]War College of Armed Forces Azerbaijan Republic Ministry of Defense Baku AZ1000 AzerbaijanN.F. Kazimov[3]Institute of Ecology National Aerospace Agency Baku AZ1000 AzerbaijanS.I. Huseynova现代电子技术(英文)...
Characteristics and theory of a silicon carbide p+-i-n photodiode First Page of the Article HC Chang,RB Campbell 被引量: 0发表: 1968年 Excess Noise Characteristics of Hydrogenated Amorphous Silicon p-i-n Photodiode Films silicon carbide (a-SiC:H)/i-type hydrogenated amorphous silicon (a-Si...
LIGHT-SENSITIVE DIODE CHARACTERISTICS OF COPPER PHTHALOCYANINE FILMS GROWING ON N-TYPE SILICON (100) CRYSTAL Schottky diodeCopper phthalocyaninespace-charge-limited currentideality factorbarrier heightIn this work, copper phthalocyanine (CuPc) thin film was deposited by spin coating technique on n-Si ...
The crystal phases of samples after heat-treatment were identified on a PANalytical X-ray diffractometer with Cu Kα (λ = 1.5406 Å) radiation during the 2θ range of 5∼70° with a step size of 0.013° The characteristic temperatures of the samples were identified by a DSC (Jupiter ...
phenomena in microfluidic applications; (E) unlike copper, platinum has a good biocompatibility. In figure, Pt nanospheres are shown[23]; (F) PDMS is one of the most used materials in microfluidics. Its main characteristics are related to its good flexibility and its high gas permeability, ...
摘要: PROBLEM TO BE SOLVED: To provide a diode in which improvement in reverse characteristics and restraint of loss at the time of forward conduction can be made compatible with each other, and which enables high-speed response and has less loss....
Soref, R. A. & Lorenzo, J. P. Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components.Electron. Lett.21, 953–954 (1985). ArticleADSCASGoogle Scholar Electron. Lett. ADSGoogle Scholar Opt. Express15 ...
In such a graphene–silicon hybrid film, we attribute the observed ‘diode’ characteristics to the variation in carrier density in the graphene layer due to the hybrid graphene–silicon interface. As a control experiment, we also prepared another sample in which the double-layer graphene was tran...
Characteristics of Aluminum-Silicon Schottky Barrier Diode "; Solid-State Electronics, Pergamon Press, 1970, vol. 13, pp. 97-104 (Gr. Britain); A.Y.C. Yu and C.A. Mead.Yu, A. Y. C., & Mead, C. A., "Characteristic of aluminum-silicon Schottky barrier diode," Solid Stat. ...
It is shown that, at high current densities corresponding to current surges, the isothermal current–voltage characteristics of high-voltage silicon carbide diodes cannot, , be measured experimentally if the lifetime of nonequilibrium carriers is high enough for effective modulation of the base resistan...