p-i-n-diodemesostrukturestepped profilethe breakdown voltagedirect loss resistanceResults of design, manufacturing and research of silicon unpackaged high-voltage microwave p–i–n-diodes are presented. Possibility to achieve the breakdown voltage up to 2000 V for the p–i–n-diodes with 200 ...
VISHAY Vishay Semiconductors Silicon Zener Diodes Zener diodes are special silicon diodes which have a relatively low, defined breakdown voltage, called the Zener voltage. At low reverse voltages a Zener diode behaves in a similar manner to an ordinary silicon diode, that is, it passes only a ...
Development of the large-area silicon PIN diode with 2 millimeter-thick depletion layer for hard x-ray detector (HXD) on board ASTRO-E the 2 mm thick silicon PIN diodes which have low leakage current, a low capacitance, and a high breakdown voltage to meet the requirements of our goal.....
Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order ...
4H-SiC PiN diode electrothermal model for conduction and reverse breakdown for simulator Recently, interest in the use of the 4H-SiC material for the manufacture of power devices has increased. The PiN diode is one of the silicon carbide power ... L Hernandez,L Hernandez,A Claudiosanchez,.....
Extensive calculations of both static and dynamic current density-voltage characteristics are shown for temperatures from 300 to 600 K. The variations of first and second breakdown voltages with doping density and diode width are presented. Second breakdown voltages are shown to increase initially with...
Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer... CH Ho,CN Liao,FT Chien,... - 《中国物理快报(英文版)》 被引量: 1发表: 2009年 SOI SJ high voltage device with linear variable doping interface thin sili...
The breakdown voltage is 8.5 V at room temperature, corresponding to a 280 nm avalanche region. The breakdown voltage is lower than the design for two reasons. One is dopant diffusion during thermal oxidation at 1000 °C, which reduces the depletion region thickness (see Supplementary Fig...
For 950°C with 30 min annealing condition, the diode gives a nearly ideal J–V characteristic with a high reverse breakdown voltage (148 V) and a low reverse leakage current density (8.4 μA/cm2). The guard-ring structure prevents the premature breakdown; the polysilicon layer prevents the...
Novel silicon avalanche diode as a direct modulated cathode with integrated planar electron-opticsSiliconDiodesCathodesBreakdown voltage... AME Hoeberechts - IEEE 被引量: 0发表: 0年 加载更多研究点推荐 integrated planar electron-optics avalanche diodes silicon avalanche diode silicon avalanche-diodes direc...