The reverse breakdown voltage tester is cooperated with the 500 model multimeter to test the voltage up to 1200V, and can satisfy the technical requirement of measuring the reverse breakdown voltage of the high-reverse-voltage silicon transistor.黄月华...
A reverse breakdown voltage tester for a high-reverse-voltage silicon transistor is characterized by comprising a 3V DC power supply, a feedback type DC inverter circuit, a boost rectifier and filter circuit, a testing interface and a multimeter interface circuit; wherein the feedback type DC in...
A method for improving the reverse breakdown voltage between P-well and N-well and related semiconductor silicon devices are described herein. In one aspect, a semiconductor silicon device comprises a substrate; a P-well in said substrate; an N-well in said substrate; wherein said N-well and...
Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAV70... BAV70 BAV70W ! , , BAV70S BAV70U $...
The area of the triangle formed by the depletion region width and the electric field represents the reverse bias voltage applied. As the reverse bias is increased, the electric field increases. When the electric field exceeds a certain value (the maximum electric breakdown ...
Reverse Leakage Current and Breakdown Voltage Improvements in GaN Schottky Diodes 来自 Semantic Scholar 喜欢 0 阅读量: 55 作者:T Boles,X Ling,A Hanson,A Kaleta,C Mclean 摘要: This paper utilizes the results of a study that has been previously published [1] by the authors of the underlying ...
a外韵 Outside rhyme[translate] aThe current in a reverse-biased diode is small (typically 10-8 A for silicon) and approximately independent of voltage until the breakdown region at high reverse voltages is reached 正在翻译,请等待...[translate]...
aThe current in a reverse-biased diode is small (typically 10-8 A for silicon) and approximately independent of voltage until the breakdown region at high reverse voltages is reached. 潮流在一个reverse-biased二极管是小 (典型10-8 A为电压的) 硅和近似地独立,直到击穿范围在高反向电压被到达。 [...
Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free (RoHS compliant) package • Qualified according AEC Q1011) BAS40.../BAS140W BAS140W BAS40-02L BAS40-07 BAS40-07W ...
back biased silicon diode 反向偏压硅二极管,反向偏置硅二极管 reverse blocking diode thyristor 反向阻断二极晶闸管 reverse biased p n junction 反偏置p-n结,反向偏置p-n结 diode reverse breakdown voltage 二极管反向击穿电压 biased electrode 加偏压的电极 biased error 偏离误差,偏置误差 相似...