" Improving Breakdown Voltage of SiC/Si Heterojunction with Graded Structure by Rapid Thermal CVD Technology " IEEE Transactions on electron devices, vol. 44, No. 11, Nov. 1997.J. D. Hwang, Y. K. Fang, K. H. Wu, and S. M. Chou, “Improving Breakdown Voltage of SiC/Si ...
Breakdown Voltage In subject area: Computer Science Breakdown voltage is the voltage at which a diode or material experiences a significant increase in current flow, leading to a breakdown in its normal functioning. It is strongly influenced by the characteristics of the material and the manufacturing...
Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order ...
专利名称：VARIABLE BREAKDOWN-VOLTAGE DIODE 发明人：HATAKEYAMA SHINICHI 申请号：JP356387 申请日：19870109 公开号：JPS63172464A 公开日：19880716 专利内容由知识产权出版社提供 摘要：PURPOSE:To make it possible to change breakdown voltage readily, by forming diffused layers at two places of a P-type Si...
et al. GaN-on-Si power technology: devices and applications. IEEE Trans. Electron Devices 64, 779–795 (2017). Article Google Scholar Meneghesso, G. et al. Reliability of power devices: bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs. In 2016 IEEE ...
Electrical Characteristic of Power MOSFET with Zener Diode for Battery Protection IC A fully integrated digital circuit with powerdevices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage... JY Kim,SU Park,NS Kim,... - 《Transactions on Electri...
The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress电压应力下超薄栅氧化层n-MOSFET的击穿特性 The characteristics of the TDDB (Time-dependent dielectric breakdown) under the CVS (constant voltage stress) and the gate current model of devices under V... Ma XiaoHu,Hao...
2) breakdown voltage 反向击穿电压 1. The linear relation between the reverse breakdown voltage and un-doping active region′s thickness of PIN light emitting diode(LED) was analyzed by using the ideal PIN structure′s electric field distribution model. 通过利用突变结PIN理想结构电场分布模型,分析...
Owing to the voltage drop at the polyimide, the breakdown voltage was increased by about 0.2–0.4 kV. Fig. 3 shows the reverse I–V characteristics of the p–n junction diodes with and without guard-ring structure. In the guard-ring structure p–n junction diode, the breakdown voltage was...
High-voltage tolerant bi-directional electrostatic discharge protection circuit In an embodiment, an apparatus includes: a signal pad; a first diode having a first terminal coupled to the signal pad and a second terminal, the first diode having a first polarity; a second diode having a second te...