voltage n.[U,C]电压;伏特数 reverse curvature 反曲率 semiconductor diode 【电】 半导体二极管 diode pentode 【电】 二极五极管 photo diode 光电二极管 最新单词 automatic data handling system的中文意思 自动数据处理系统 automatic data exchange system的中文意思 自动数据交换系统 automatic data ac...
The essential factor to determine the breakdown voltage of the diode is its doping concentration. Exceeding this voltage level causes the exponential increase in the leakage current of the diode. When a diode breakdown’s, overheating can be observed. So, when operating with reverse voltages heat ...
网络二极管反向击穿电压 网络释义 1. 二极管反向击穿电压 ... diode forward voltage 二极管正向电压diode reverse breakdown voltage二极管反向击穿电压diode voltage 二极管正向电压 ... tieba.baidu.com|基于11个网页
PURPOSE:To reduce a forward voltage and a thermal resistance and to improve electric performance and mechanical strength by partly moving a second diffused layer toward a first diffused layer thereby to partly reduce the thickness of a silicon wafer between both the diffused layers. CONSTITUTION:A ...
Clamping vs Breakdown Voltage: Clamping voltage prevents excess voltage from passing, while breakdown voltage is the point where current starts flowing in a diode. Let-Through Voltage: Clamping voltage is also known as let-through voltage, indicating the maximum voltage a surge protector lets through...
Breakdown voltage is the voltage at which a diode or material experiences a significant increase in current flow, leading to a breakdown in its normal functioning. It is strongly influenced by the characteristics of the material and the manufacturing process. AI generated definition based on: Semicon...
Using this condition, it is shown that, for SOI thicknesses below about 1 μm, diode breakdown voltage increases with decreasing SOI layer thickness. Experimentally, breakdown voltages in excess of 700 V have been demonstrated for the first time on diodes having approximately 0.1-μm-thick SOI ...
This opportunity appears in the breakdown voltage collapse, for a gated diode operated in the common-cathode configuration. Additionally, the proposed method outfits uniform conditions for voltage drop across the oxide and carrier multiplication.关键词: gated-diode Flat-band voltage shift breakdown ...
VARIABLE BREAKDOWN-VOLTAGE DIODE 专利名称：VARIABLE BREAKDOWN-VOLTAGE DIODE 发明人：HATAKEYAMA SHINICHI 申请号：JP356387 申请日：19870109 公开号：JPS63172464A 公开日：19880716 专利内容由知识产权出版社提供 摘要：PURPOSE:To make it possible to change breakdown voltage readily, by forming diffused layers at...
In the guard-ring structure p–n junction diode, the breakdown voltage was 5.0 kV, which was about 0.2 kV higher than the 4.8 kV of the normal circular p–n diode. Sign in to download hi-res image Fig. 1. Schematic cross section of vertical GaN p–n diodes with a guard-ring ...