In this paper, the comparative study between the normal avalanche breakdown and delayed avalanche breakdown for lOkV 4H-SiC Fast Ionization Device is experimented by numerical simulation methods. A 4H-SiC traditional asymmetric thyristor with the forward blocking voltage of lOkV, the static breakdown ...
由于曲度在连接点的边缘它比一个理想的平面连接点导致一个更加巨大的电场。 As a result, the breakdown voltage of a cylindrical junction diode is substantially lower than that of an ideal planar junction diode. 边缘终止技术在一个圆柱形结型二极管用于减少电场的集中。[translate] ...