二十多年来,碳化硅(Silicon Carbide,SiC)作为一种宽禁带功率器件,受到人们越来越多的关注。与硅相比,碳化硅具有很多优点,如:碳化硅的禁带宽度更大,这使碳化硅器件拥有更低的漏电流及更高的工作温度,抗辐照能力得到提升;碳化硅材料击穿电场是硅的 10 倍,因此,其器件可设计更高的掺杂浓度及更薄的外延厚度,与相同电压...
Silicon Carbide MOSFET模块 对于一直在设法提高效率和功率密度并同时维持系统简单性的功率设计师而言,碳化硅SiC MOSFET的高开关速度、高额定电压和小RDS(on)使得它们具有十分高的吸引力。然而,由于高开关速度会导致高漏源电压(Vds)峰值和长振铃期,它们会产生电磁干扰,尤其是在电流大时。本文提供了一个较好的解决方案来...
SILICON CARBIDE MOSFETPROBLEM TO BE SOLVED: To increase the gate-drain breakdown voltage of a MOSFET for power by simple device structure.CHIYAARUZU II UEITSUERUチャールズイーウェイツェルMOHITO BATONAGAAモヒトバトナガー
Silicon Carbide CoolSiC™ 650 V MOSFET PLECS 01_02 | 2023-02-23 | 111 KB Download ShareEN Simulationstools Simulationstools IPOSIM – Infineon power simulation tool Infineon Read More IPOSIM – Infineon online power simulation tool for loss and thermal calculation of Infineon power modules and ...
A silicon carbide MOSFET (10) is formed to have a high breakdown voltage. A breakdown enhancement layer (20) is formed between a channel region (14) and a drift layer (12). The breakdown enhancement layer (20) has a lower doping concentration that increases the width of a depletion region...
See our Silicon Carbide (SiC) devices including SiC MOSFETs and diodes, SiC power modules, and related SiC technology and tools.
Broad and Flexible Portfolio of Silicon Carbide (SiC) Discretes Our portfolio of discrete SiC MOSFETs and Schottky Barrier Diodes (SBDs) offers a broad portfolio of solutions. These MOSFETs and diodes increase system efficiency compared to silicon MOSFET and IGBT-based solutions while lowering your ...
5 minutes – 5 reasons why SiC To lead the transformation towards sustainable energy generation and consumption, you know that silicon carbide technology is at the strategic core to address key market trends in this direction. To do so, here are five reasons why you should choose Infineon’...
DS10954: Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package2.0786 KB Application Notes DescriptionVersionSize AN4671: How to fine tune your SiC MOSFET gate driver to minimize losses1.1555 KB ...
is a type of transistor used for amplifying or switching electronic signals. The MOSFET is a core component in modern electronics and is the building block of most of the world’s integrated circuits. Over time, technology has transitioned from the use of silicon to silicon carbide, or SiC, ...