Problem to be solved: to provide a SiC MOSFET having a termination structure region capable of effectively suppressing the expansion of the stacking fault and increasing the withstand voltage. The upper surface of the drift layer 1 between the active portion 100 and the terminating structure region...
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon-carbide semiconductor device suppressing degradation of current leakage characteristics and contributing to stabilization of quality and improvement of yield by improving adhesiveness between a silicon-carbide wafer and a carbon protective...
The present invention relates to a method of manufacturing a trench gate type silicon carbide MOSFET with a thick trench bottom. The method includes: a step of placing an ion implantation mask in the upper part of a p-type base and forming a p-type source using the ion implantation mask;...
nor should it be a very bad conductor of electricity. Its properties can be changed by adding or removing atoms. Silicon is the most widely used semiconductor material. Few other materials used in making
9. The silicon carbide semiconductor device of claim 1, wherein the semiconductor device is an accumulation MOSFET and, when the electric potential of the gate electrode is approximately zero, the surface channel layer is set at a pinch-off state by a depletion layer extending from the second ...
SILICON CARBIDE SEMICONDUCTOR DEVICES, AND METHODS FOR MANUFACTURING THEREOF A semiconductor device is presented. The device includes a semiconductor layer including silicon carbide, and having a first surface and a second surface. A gate insulating layer is disposed on a portion of the first surface...
A method of making a silicon carbide MOSFET device can include: providing a substrate with a first doping type; forming a patterned first barrier layer on a first surface of the substrate; forming a source region with a first doping type... ...
silicon micro-machining with KOH anisotropic etch, backside sputter depositions of Ti/Ni/Ag, gold deposition, gold alloy, lift off processes, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2, silicon wafers back grind and polish followed by tri-metal...
With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer
3.The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor substrate is a wafer of silicon carbide. 4.A semiconductor device having:a semiconductor chip diced into quadrangle from a flat plate-like silicon carbide semiconductor substrate;a stress relaxation re...