版图中silicided block layer的作用 (转载) tsmc的RPO层(第34层)或umc的SAB层(第29层),在画poly resistor和ESD时都用到了,这一层有什么作用,增大电阻率吗?在工艺上是怎样实现的呢? RPO其实只是一个用在光刻的掩膜,它的作用是在做完POLY以后,再做 salicide 的时候,将有RPO的地方档主,这样有RPO的地方就不...
After patterning a semiconductor material for the gate electrode and resistorstructures, a first dielectric layer is used to protect a poly resistor that is not to be silicided,then a first silicidation is performed for partially siliciding the gate electrode of thetransistor. If the gate ...
The poly silicon region is formed having a first doped region longer than a second doped region. The poly silicon region as one single structure is adapted to function as a resistor and a diode coupled in series, said structure adapted to generate currents in a feedback loop to generate a ...
tsmc的RPO层(第34层)或umc的SAB层(第29层),在画poly resistor和ESD时都用到了,这一层有什么作用,增大电阻率吗?在工艺上是怎样实现的呢? RPO其实只是一个用在光刻的掩膜,它的作用是在做完POLY以后,再做 salicide 的时候,将有RPO的地方档主,这样有RPO的地方就不会有硅化物形成,这样保持了POLY较高的电阻率...
Structure 740 includes polysilicon layer line or strip 742 on top of gate oxide pad 744 configured for operation as a polysilicon resistor for device 720. In addition, strip 742 is bounded by spacer walls 736. Spacer walls 736 are spaced apart from each other along substrate 722. Structure 75...
5266156Methods of forming a local interconnect and a high resistor polysilicon load by reacting cobalt with polysilicon1993-11-30Nasr 5242831Method for evaluating roughness on silicon substrate surface1993-09-07Oki 5198382Semiconductor element and manufacture thereof1993-03-30Campbell et al. ...
After patterning a semiconductor material for the gate electrode and resistorstructures, a first dielectric layer is used to protect a poly resistor that is not to be silicided,then a first silicidation is performed for partially siliciding the gate electrode of thetransistor. If the gate ...
In making a polysilicon resistor in a polycide line, a thick oxide is established selectively to shield lightly doped polysilicon first from heavy doping and then from the silicide. Before adding silicide, a selected region of polysilicon broader than and including the site of the poly resistor ...
ofA bipolar transistor and resistor are provided. Fabrication includes using a high temperature oxide to form sidewall spacers for the transistor contacts and/or to overlay the resistor portion of the device. Deposition of the HTO is combined with dopant drive-in so that fewer total steps are re...
tsmc的RPO层(第34层)或umc的SAB层(第29层),在画poly resistor和ESD时都用到了,这一层有什么作用,增大电阻率吗?在工艺上是怎样实现的呢? RPO其实只是一个用在光刻的掩膜,它的作用是在做完POLY以后,再做 salicide 的时候,将有RPO的地方档主,这样有RPO的地方就不会有硅化物形成,这样保持了POLY较高的电阻率...