埃赋隆半导体(Ampleon)近日宣布,在其第9代高性能50VSi LDMOS高效率射频功率晶体管产品系列中新增两款产品——BLF978P和BLF974P.这两款产品专为超高功率射频功率放大器而设计,可提供数百千瓦功率,并具有很高的效率和高增益特性.在AB类工作条件下,这两款功率晶体管在225MHz时均可提供高达80%的工作效率.在千瓦级...
Si基功率器件仿真交..Si基功率器件仿真交流指导( LDMOS SGT SJMOS LIGBT RCIGBT)+SiC(JBS,JFET,MOSFET)
Drift Region Effects of Power MOSFETs Improvement in process technology helps choose different materials in addition to shrinking devices. The power MOS device and laterally diffused metal oxid... HC You,CY Wu,YH Lin,... - International Symposium on Computer 被引量: 2发表: 0年站内活动 0...
A novel SiC/Si heterojunction lateral double-diffused metal-oxidesemiconductor (LDMOS) with a reversed L-shaped field plate and a stepped oxide layer has been proposed to improve the tradeoff between the breakdown voltage (BV) and specific on-resistance (Ron,sp). The reversed L-shaped field pla...
the breakdown voltage.The impacts of key device parameters on REDI LDMOS behaviors are comprehensively studied with device simulation tools.The structural ... Y Liu,H Xiao,R Huang 被引量: 0发表: 0年 Simulation of a new hybrid Si/SiC power device for harsh environment applications This paper ...
Analysis of defects created at Si/SiO2 interface in a power RF LDMOS device due to temperature effects doi:10.1109/SCC47175.2019.9116129elemental semiconductors,power MOSFET,silicon,silicon compoundsThermal constraints and the variation of high temperature levels are two of the most observed degradation ...
The amplifier was designed using large signal Si-LDMOS models, which demonstrated saturation P1dB of 41dBm and 53% PAE. The AM-AM and AM-PM measured data of the balanced amplifier is extracted and embedded in the device under test (DUT) based on IEEE 802.16 OFDM WLAN Transceiver system. ...
Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation 来自 Scientific.Net 喜欢 0 阅读量: 53 作者:CW Chan,Y Bonyadi,PA Mawby,PM Gammon 摘要: In this study, a 600 V LDMOSFET using a silicon-on-silicon carbide (Si/SiC) substrate is presented. ...
Evaluation of Si-LDMOS transistor for RF power amplifier in 2-6 GHz frequency range Grigori Doudorov Reg nr: LiTH-ISY-EX-3435-2003 Linkping 2003 Evaluation of Si-LDMOS transistor for RF power amplifier in 2-6 GHz frequency range Master Thesis Division of Electronic ...
Amplificateurs de puissance à très haut rendement, pour les systèmes radar basés sur les technologies LDMOS Si et HEMT GanThe objective of this work is to evaluate power technologies and high efficiency classes (F and inverse F ) ... S Allam-Ouyahia - 《Bibliogr》 被引量: 0发表: 2006...