氧压 的增大而 增大 ,导致 Si( 100)面和 La2/3Sr1/3MnO3 图2 (1 10)衍射峰 的角度 与半高 宽(FWHM)随氧压 的变 化 曲线 Fig ·2 O xy gen pressur e depend ence o f diffraction peak and FWHM for (110) peak (1 l O)面 的晶格失配度在 10 Pa 氧压 时达到最小值 ,结 ...
XRD pattern also shows the (110) peak of atomic layer deposited (ALD) HfO2 and the (100) peak of Si. The HfO2 films grown at 250°C by ALD was amorphous. However, the BT-BCN was deposited onto HfO2/Si at 750°C in an O2 ambient immediately after deposition of HfO2 films. ...
The optimized condition of growing LN film on Si (100)by PLD is found: O2 pressure 30 Pa, substrate temperature600u00b0C. Only (006) reflection of LN was observed besides the (002) reflection ofsilicon substrate from XRD pattern. The FWHM (~0.21u00b0) of (006) reflectionpeak is much ...
All spectra were calibrated using the C-1s peak film. (284.6 eV). The XPS investigation revealed Whereas the select regions (in orange and bthlueep)rienseFnigce. 4o(faC) coe, nFtee,rTeadarnedspTeac2tOiv5eliyn the Si(100)/CFA/Ta thin at 230.4 eV and 241.6 eV dbreiensnp...
Synchrotron radiation extended X-ray absorption fine structure and Raman scattering were used to characterize a series of 3C-SiC films grown on Si (100) by chemical vapor deposition. EXAFS can probe the physical and chemical structure of matters at an atomic scale and Raman parameters such as in...
It needs to be mentioned that defects of the crystal lattice including displacements, dislocations, and improbity create stress inside the crystal lattice, resulting in the broadening and intensification of the XRD peak. The average crystallite size and the strain measure resulting from lattice stress...
( ) Si subst rate based o n t he o bservatio n of st ro ng XRD peaks under t he Go nio mo de. Also t he peak po sitio ns of Ni Si wit h t he rising temperat ures were fo und to be lef t2shif ted ,w hich are t ho ught to be due to t he effect of ...
In the XRD spectrum, only Ag(002) and Ag(004) peaks were observed along with the Si(004) peak that belongs to the substrate. Due to the larger x-ray beam size (250 μm × 250 μm), the XRD show the macroscopic ordering. Hence, the XRD data confirms the presence of ...
(b) The XRD patterns of Pr2Co0.86Si2.88 at T=300K (top) and T=15K (bottom) along with full-Rietveld analysis. Inset of (top) presents the major peak associated with the superstructure of AlB2-type structure. Inset of (bottom) presents the temperature dependence of unit-cell volume along...
A single-peak fit of a Gaussian function was employed to discern the photoluminescence of PbS on Si(100) substrate.doi:10.1080/14786435.2014.959579TavakkolDepartmentTohidiDepartmentKazemDepartmentJamshidi-GhalehDepartmentTaylor & FrancisPhilosophical Magazine...