内容提示: 第41卷 第 5期2021年 10月Vol.41,No.5Oct.,2021固体电子学研究与进展RESEARCH & PROGRESS OF SSESi (111)衬底上 Mg 2 Si薄膜的 XRD和拉曼光谱研究∗廖杨芳1谢 泉2 **( 1 贵州师范大学 物理与电子科学学院,贵阳,550001) ( 2 贵州大学 大数据与信息工程学院,贵阳,550025)2021⁃04⁃07...
XRDmobilityWe report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN , a graded Al ...
在Si(111)衬底上,以MOCVD方法高温外延生长的AIN为缓冲层,使用氮化物气相外延(HVPE)方法外延生长了15Km的c面GaN厚膜.并利用X射线衍射(XRD)、光致发光谱(PL)、拉曼光谱(Raman)等技术研究了GaN厚膜的结构和光学性质.分析结果表明,GaN厚膜具有六方纤锌矿结构,外延层中存在的张应力较小,为0.17GPa,在363.7nm处...
The 3C-SiC grown on off-axis Si, compared to that grown on on-axis Si, has smaller surface roughness, narrower FWHM of SiC(111) peak, and smaller bow magnitude. Methods Growth of 3C-SiC films. 3C-SiC films with thickness ranging from 10 to 1110 nm were deposited on both on-...
Indeed, beside the 3 diffraction peaks caused by the Si(111) substrate, only one additional peak can be detected, which is in fact a combination of the SiC(111) peak (~35.8°) and the AlGaN(002) peak (~36.1°) as confirmed by a high-resolution ω -2θ XRD scan (not shown here...
According to XRD symmetric rocking curve ω/2θ scans of (0002) plane at room temperature, the full width at half-maximun of GaN pn-junction sample was calculated as 0.34°, indicating a high quality layer of GaN pn-junction. Surprisingly, there was no quenching of the A(LO) peak, with...
The real-time phase transformations of the Si@TiO2−xFx-3 composite during the lithiation-delithiation process were investigated by Operando XRD. As shown in Fig. 7a, the diffraction peak at 25.3° for anatase (101) gradually shifted toward lower two theta angles as the voltage decreased from...
The results of XRD measurements on as-deposited samples of Ag on Br–Si(111) and on SiO2/Si(111) with Cu Kα X-rays are shown in Fig. 1. Only the Ag(111) diffraction peak is observed in Ag/Br–Si(111) while Ag(111) and Ag(200) peaks are observed in Ag/SiO2/Si(111) sample...
In the XRD spectrum, only Ag(002) and Ag(004) peaks were observed along with the Si(004) peak that belongs to the substrate. Due to the larger x-ray beam size (250 μm × 250 μm), the XRD show the macroscopic ordering. Hence, the XRD data confirms the presence of ...
the growth at higher temperature results in smoother surface with reduced root mean square (RMS) roughness as well as slightly enhanced crystal quality with smaller full width at half maximum (FWHM) of symmetric (002) and asymmetric (103) XRD peaks. However, as shown in Fig.2, this is not...