Reiche M, Go¨sele U and Wiegand M 2000 Modification of Si (1 0 0)-surfaces by SF6 plasma etching - application to wafer direct bonding Cryst. Res. Technol. 35 807-21Reiche M,Sele U G,Wiegand M.Modification of Si (100)-surfaces by SF6plasma etching-application to wafer directbonding....
Effect of SF6 Plasma Etching on the Optical, Morphological and Structural Properties of SiC Films Nierlly Karinni de Almeida Maribondo Galvão Armstrong Godoy Junior Mariana Amorim Fraga Silicon(2023) OES diagnostics as a universal technique to control the Si etching structures profile in ICP ...
The effect of plasma pretreatments (reactive ion etching in SF6 and SF6/O-2) on Si/Si wafer direct bonding was investigated. Etching in SF6 caused a bonding behaviour generally known from hydrophobic (HF etched) samples, whereas adding O-2 to the feed gas caused the Si(100) surfaces to ...
Abstract:RIEofSiusingSF^/O2/CHFplasmaswasstudied.Thecharacteristicsoftheetch processareexploredusingastatisticalexperimentaldesign.Etchrateandselectivityareexaminedas afunctionofSFflow,O,flow,CHFflow,pressureandtheRFpowerinordertooptimizeetching condition.Theeffectsofthevariablesonthemeasuredresponsesandtheetchmechan...
With the increase of O 2 concentration in the plasma, there is a decrease in the ratio of neutral species (i.e., F/ O) and overall etch rate, signifying that chemical etching is the prominent process for the discharge. In conclusion, the anisotropic etching of Si substrate can be ...
We have investigated the etching of high aspect ratio holes (∼4 μm deep, ∼0.2 μm diameter) in silicon using plasmas maintained in mixtures of SF6, O2, and HBr or Cl2 gases. The etching experiments were conducted in a low pressure (25 mTorr), high density, inductively coupled plas...
This paper presents the experimental data about SiN and SiO2 etching by SF6/H2/Ar/He plasma discharge. It has been shown that SiN etch rate increases if add small amount of He (less than 5 sccm) into the discharge. The SiO2 etch rate does not depend on He content in the plasma dischar...
Si3N4/Al2O3thin film was used as an electrical insulating layer between the microheater and test electrodes. The insulating layer was deposited through plasma-enhanced chemical vapor deposition (PECVD). To expose the Pt pad for wire bonding, a reactive ion etching (RIE) method was utilized ...
R. A. Morgan, Plasma Etching in Semiconductor Fabrication, Elsevier, Amsterdam, 1985. Google Scholar T. Sugano (Ed.), Application of Plasma Processes to VLSI Technology, Wiley–Interscience, New York, 1985. Google Scholar S. S. Cooperman, H. K. Choi, H. H. Sawin, and D. F. Kole...
Dual‐function remote plasma etching/cleaning system applied to selective etching of SiO2 and removal of polymeric residues A dual‐function chamber integrating (i) remote rf plasma‐enhanced etching with low energy, <100 eV, ion bombardment and (ii) in situ Si surface cleaning ... Yasuda,T. ...