Intel在其22nm FinFET工艺中首先推出SAC flow,主要是添加了三个步骤,具体流程如下: Intel标准工艺形成metal gate metal gate向下凹陷 向下凹陷的区域中填充氮化硅etch stop layer然后CMP磨平 然后覆盖一层氧化硅 最后进行contact patterning 最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain...
In one aspect, a method of forming one or more self-aligned gate contacts in a semiconductor device includes providing a substrate having formed thereon at least one gate stack, where the gate stack includes a gate dielectric and a gate electrode formed over an active region in or on the ...
最后进行contact patterning 最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain的contact overlaid on metal gate上,由于氮化硅介电质存在,也不至于短路,这样就大大提高了misalignment margin。 上面的二维图可能不好理解,这里要说明的是,Gate上也有contact,但是和source/drain的contact不在...
A self-aligned contact is formed adjacent to the one sidewall spacer of the gate structure that is electrically isolated from the gate conductor by the partial dielectric cap and the at least one sidewall spacer. 展开 DOI: 10.1149/ma2016-02/17/1498 ...
Self-aligned contact A method for fabricating self-aligned contacts includes forming a liner over a gate structure having a gate conductor and one sidewall spacer and etching an exposed gate conductor to form a recess extending less than a width of the gate ... Kangguo Cheng,Xin Miao,Wenyu ...
摘要：A method for forming a self-aligned contact utilizes a thin insulating layer formed on the upper surface of a conductive layer. A barrier layer is deposited over the insulating layer, and gate electrodes are then defined. Sidewall spacers are formed along the vertical sidewalls of the ...
is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.
A method for forming a self-aligned contact on a semiconductor substrate provided with a plurality of field-effect transistors. The method comprises the steps of: forming a thin nitride insulating layer on a gate structure and a diffusio... Tse-Yao Huang,Kuo-Chien Wu,Yi-Nan Chen - US 被引...
A self-aligned contact ETOXtrade flash memory process with W-gate capable of MLC operation is presented for the first time. Several key process elements were successfully integrated to achieve functional test structures. Significant cell area reduction can be realized using the SAC architecture by agg...
Polysilicon self-aligned contact and a polysilicon 专利名称：Polysilicon self-aligned contact and a polysilicon common source line and method of forming the same 发明人：Hsuan-Ling Kao,Chun-Pei Wu,Hui-Huang Chen,Wen-Bin Tsai,Henry Chung 申请号：US10279916 申请日：20021025 公开号：US20040079984A1 ...