In one aspect, a method of forming one or more self-aligned gate contacts in a semiconductor device includes providing a substrate having formed thereon at least one gate stack, where the gate stack includes a gate dielectric and a gate electrode formed over an active region in or on the ...
Intel在其22nm FinFET工艺中首先推出SAC flow,主要是添加了三个步骤,具体流程如下: Intel标准工艺形成metal gate metal gate向下凹陷 向下凹陷的区域中填充氮化硅etch stop layer然后CMP磨平 然后覆盖一层氧化硅 最后进行contact patterning 最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain...
Intel 22nm工艺中,关于contact连线有个细节工艺叫SAC,全称叫self-aligned contact,中文翻译叫自对准接触,有读者后台留言想了解具体细节,这篇文章详细介绍下SAC工艺。 简单来说说,SAC工艺就是在栅极gate上方添加一层保护性介电层,目的是防止源,漏极的contact与栅极gate短路。主要原因是当时contact的pitch越来越小,source...
最后进行contact patterning 最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain的contact overlaid on metal gate上,由于氮化硅介电质存在,也不至于短路,这样就大大提高了misalignment margin。 上面的二维图可能不好理解,这里要说明的是,Gate上也有contact,但是和source/drain的contact不在...
United States Application US20120139061 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
A method of forming an active device having self-aligned source/drain contacts and gate contacts, including, forming an active area on a substrate, where the active area includes a device channel; forming two or more gate structures on the device channel; forming a plurality of source/drains ...
A self-aligned contact is formed adjacent to the one sidewall spacer of the gate structure that is electrically isolated from the gate conductor by the partial dielectric cap and the at least one sidewall spacer. 展开 DOI: 10.1149/ma2016-02/17/1498 ...
Partial self-aligned contact for MOL Partial self-aligned contact structures are provided. In one aspect, a method of forming a semiconductor device includes: patterning fins in a substrate; f... R Xie,V Basker,A Reznicek,... 被引量: 0发表: 2022年 Fabrication of self-aligned gate contac...
Self-aligned contacts to gates 专利名称：Self-aligned contacts to gates 发明人：MARK BOHR 申请号：AU2003260060 申请日：20030821 公开号：AU2003260060A8 公开日：20040311 专利内容由知识产权出版社提供 摘要：The present invention describes methods, apparatus, and systems related to polysilicon gate contact ...
A gate contact(e.g. 19) to a field effect transistor is opened over the source/drain region(e.g. 21) by forming polysilicon plugs(e.g. 15) between the gate structure(e.g. 5), which has a nitride top layer(e.g. 11), and the field oxide regions(e.g. 3). The contacts(e.g...