A method is provided for a self-aligned via of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A conductive bilayer (26,28) is formed over a conductive structure and a portion of a first underlying interlevel dielectric layer (24). The conductive ...
self-assembled monolayers (SAMs)23,24,25,26,27, and small molecule inhibitors28,29have been used to block nucleation in non-growth areas. For example, SAMs have been used to block nucleation on Cu/Co regions to achieve fully self-aligned via (FSAV) integration. This approach ...
limited process latitude in the printing of small vias. Additionally, with small via sizes impurities can lead to high resistivity or other connectivity issues and the placement of the vias with respect to the metal levels becomes more and more critical as the width of the metallization lines ...
SANTA: Self-aligned nanotrench ablation via Joule heating for probing sub-20 nm devices 来自 掌桥科研 喜欢 0 阅读量: 30 摘要: 在纳米规模操作材料是挑战性的,特别地如果有 nanoscale 电极的排列被需要.这里,我们描述没有平版印刷术的,自我排列的 nanotrench 脱离(圣特) 创造在聚合物的沟 poly 喜欢的 ...
Grid self-aligned metal via processing schemes for back end of line (BEOL) interconnects are described. In an example, a method of fabricating an interconnect structure for a semiconductor die includes forming a lower metallization layer including alternating metal lines and dielectric lines above a ...
Patent Issued for Semiconductor devices with backside power rail and backside self-aligned via (USPTO 11355601) News editors obtained the following quote from the background information supplied by the inventors:\n"Conventionally, integrated circuits (IC) are built i... - 《Electronics Newsweekly》 ...
The upper portion of the at least one metal block is lithographically patterned to form an integrated line and via structure including a metal line having a substantially constant width and at least one overlying metal via having the same substantially constant width and borderlessly aligned to the...
While very small gap sizes can significantly lower the S/D resistance for non-self-aligned contact metallization by bringing the via very close to the gate, an important benefit is still provided by self-aligned contact metallization in terms of contact area, allowing self-aligned contact ...
Spacers for field emission display fabricated via 优质文献 相似文献 参考文献 引证文献GaAs LSI-directed MESFET's with self-aligned implantation for n+-layer technology (SAINT) Self-aligned implantation for n+-layer technology (SAINT) has been developed for improvement in normally-off GaAs MESFET's...
Stacked via-stud with improved reliability in copper metallurgy A multilevel semiconductor integrated circuit (IC) structure including a first interconnect level including a layer of dielectric material over a semicondu... BN Agarwala,CA Barile,HM Dalal,... 被引量: 0发表: 2004年 High-Temperature...