A method is provided for a self-aligned via of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A conductive bilayer (26,28) is formed over a conductive structure and a portion of a first underlying interlevel dielectric layer (24). The conductive ...
self-assembled monolayers (SAMs)23,24,25,26,27, and small molecule inhibitors28,29have been used to block nucleation in non-growth areas. For example, SAMs have been used to block nucleation on Cu/Co regions to achieve fully self-aligned via (FSAV) integration. This approach ...
Grid self-aligned metal via processing schemes for back end of line (BEOL) interconnects are described. In an example, a method of fabricating an interconnect structure for a semiconductor die includes forming a lower metallization layer including alternating metal lines and dielectric lines above a ...
Due to the high selectivity of the silicon via etching process the oxidized silicon anchors and chip backside can be exploited for creating self-aligned TSVs. Accordingly, a seamless oxide isolation at the chip backside and inside the TSVs is provided. 展开 ...
Patent Issued for Semiconductor devices with backside power rail and backside self-aligned via (USPTO 11355601) News editors obtained the following quote from the background information supplied by the inventors:\n"Conventionally, integrated circuits (IC) are built i... - 《Electronics Newsweekly》 ...
SELF-ALIGNED TOP VIA STRUCTURE A back end of line interconnect structure and methods for forming the interconnect structure including a self-aligned via generally includes a subtractive ... R Xie,C Chi,CC Yang,... 被引量: 0发表: 2021年 Using mask layers to facilitate the formation of self...
\begin{aligned} E(p,q) &= -\frac{1}{N} \sum_{i=1}^{N} \sum_{y=1}^{K} q\left(y \mid \boldsymbol{x}_{i}\right) \log p\left(y \mid \boldsymbol{x}_{i}\right)\\ &= - \sum_{i=1}^{N} \sum_{y=1}^{K} \frac{1}{N}q\left(y \mid \boldsymbol{x}_{i}...
\end{aligned}$$ (2) The scaled stock index, treasury bond yield, and gold price are plotted in Fig. 5a,b. Figure 5a reveals the treasury bond yield and the gold price often act negatively to the stock index while shortly after the Covid-19 outbreak (Fig. 5b), although the treasury...
A magnetic tunnel junction (MTJ) stack is formed on the metal strap, and a metal shield is formed over the MTJ stack, the metal shield being self-aligned with respect to the metal strap. An upper metallization line is conductively coupled to the metal shield, wherein the metal shield ...
FIG. 9 is a diagram illustrating a three-dimensional view of a via cut out in the resist in accordance with the system and methods described herein. FIG. 10 is a diagram illustrating an example fabrication process for a self-aligned via in accordance with one embodiment of the invention. ...