1. 自我对准接触孔 对DRAM元件而言,它必须用到自我对准接触孔(self-aligned contact)技术,来免除接触孔到字元线(word line) 的对准问题,并… ssttpro.acesuppliers.com|基于 1 个网页 2. 自我对齐接触 Nanomos Technology - Excel ... self-aligned 自我对齐self-aligned contact自我对齐接触self-aligned offset...
然后覆盖一层氧化硅 最后进行contact patterning 最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain的contact overlaid on metal gate上,由于氮化硅介电质存在,也不至于短路,这样就大大提高了misalignment margin。 上面的二维图可能不好理解,这里要说明的是,Gate上也有contact,但是和source...
Said insulating cap layer is an etch stop structure is formed, the etch stop self-aligned with the gate structure, and prevents etching of the contact portion of the gate electrode is exposed, thereby preventing the contact between the gate and the portion The short circuit. 所述绝缘帽层能够...
A self-aligned contact is formed adjacent to the one sidewall spacer of the gate structure that is electrically isolated from the gate conductor by the partial dielectric cap and the at least one sidewall spacer. 展开 DOI: 10.1149/ma2016-02/17/1498 ...
Self-aligned contact with zero offset to gate.In one example, an integrated circuit is disclosed that includes: a first layer having a dielectric, a first conductive compound, and a second conductive compound; a second layer having a third conductive connection; a conductive via between the ...
Self-Aligned Carbon Nanotube Thin-Film Transistors on Flexible Substrates With Novel Source–Drain Contact and Multilayer Metal Interconnection This paper presents the development and characterization of self-aligned carbon nanotube thin-film transistors (CNT-TFT) on flexible substrates. The channe... Pham...
forming an insulator to include a recess, depositing a conductor around the insulator, and etching the conductor to form the sidewall image transfer conductor, wherein the conductor remains in the recess and forms the contact pad and the recess is perpendicular to the sidewall image transfer ...
A self-aligned contact, and a method for fabricating the same, are provided. A conductive element having an overlying hydrogen silsesquioxane (HSQ)-based dielectric cap is formed over a semiconductor substrate. Dielectric sidewall spacers are then formed adjacent to sidewalls of the conductive elemen...
A second etch removes organic-containing layer 32 in contact widow 41 (and preferably strips photoresist), using conformal layer 30 as an etch stop. A short anisotropic etch may be used to clear conformal layer 30 from gap bottom 43, after which conducting material 40 may be used to make ...
优化自对准接触孔底部金属硅化物形貌的方法 Optimization of self-aligned contact hole at the bottom of the metal silicide morphology method The present invention, by forming a protective layer of silicon oxide on the sidewalls of the substrate in the loss region. This avoids the formation ... 刘...