1. 自我对准接触孔 对DRAM元件而言,它必须用到自我对准接触孔(self-aligned contact)技术,来免除接触孔到字元线(word line) 的对准问题,并… ssttpro.acesuppliers.com|基于 1 个网页 2. 自我对齐接触 Nanomos Technology - Excel ... self-aligned 自我对齐self-aligned contact自我对齐接触self-aligned offset...
Intel22nm工艺中,关于contact连线有个细节工艺叫SAC,全称叫self-aligned contact,中文翻译叫自对准接触,有读者后台留言想了解具体细节,这篇文章详细介绍下SAC工艺。 简单来说说,SAC工艺就是在栅极gate上方添加一层保护性介电层,目的是防止源,漏极的contact与栅极gate短路。主要原因是当时contact的pitch越来越小,source/d...
Said insulating cap layer is an etch stop structure is formed, the etch stop self-aligned with the gate structure, and prevents etching of the contact portion of the gate electrode is exposed, thereby preventing the contact between the gate and the portion The short circuit. 所述绝缘帽层能够...
A self-aligned contact includes a lower contact disposed in a dielectric layer of a substrate and an upper contact disposed in the dielectric layer and directly on the lower contact, and electrically connected to the lower contact. The profile of the upper contact and the lower contact is zigza...
Self-aligned contact 专利名称：Self-aligned contact 发明人：ボーア，マーク ティー．,ガーニ，タヒル,ラッハ ル－オラビ，ナディア エム．,ジョシ，スブハ シュ,スタイガーウォルド，ジョーゼフ エム．,ク ラウス，ジェイソン ダブリュー．,ファン，ジャック,マッキーウィッツ，ライ...
Partial self-aligned contact structures are provided. In one aspect, a method of forming a semiconductor device includes: patterning fins in a substrate; f... R Xie,V Basker,A Reznicek,... 被引量: 0发表: 2022年 Fabrication of self-aligned gate contacts and source/drain contacts directly ...
Self-aligned contact with zero offset to gate.In one example, an integrated circuit is disclosed that includes: a first layer having a dielectric, a first conductive compound, and a second conductive compound; a second layer having a third conductive connection; a conductive via between the ...
Study on self-aligned contact oxide etching using C5F8/O2/Ar and C5F8/O2/Ar/CH2F2 plasma The main problems with SAC etch processes in ULSI devices of sub-0.1-μm-design rule are low selectivity to nitride and etching-stop due to high ... SB Kim,DG Choi,TE Hong,... - 《Journal of...
Self-aligned contact process using low densitylow 优质文献 相似文献 参考文献 引证文献Low-loss coplanar waveguides interconnects on low-resistivity silicon substrate The fabrication of CPWs is low-temperature (below 250/spl deg/C) and incorporates a spin-on low-k dielectric benzocyclobutene (BCB) and...
FIGS. 1-6 are cross sections showing a method for forming a self-aligned contact according to an embodiment of the invention; and FIG. 7 is a cross section showing an integrated circuit with a plurality of self-aligned contacts acc... Ho, Jar-ming,Chen, Yi-nan,Liu, Hsien-wen 被引量...