网络自对准栅场效应晶体管 网络释义 1. 自对准栅场效应晶体管 ... self aligned gate 自对准栅self aligned gate fet自对准栅场效应晶体管self aligned gate mos 自对准栅金属氧化物半导体 ... www.foodmate.net|基于26个网页
Self-aligned gate endcap (SAGE) architectures having gate contacts, and methods of fabricating SAGE architectures having gate contacts, are described. In an example, an integrated circuit structure includes a gate structure over a semiconductor fin. A gate endcap isolation structure is laterally ...
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices above insulator substrates, and methods of fabricating self-aligned gate endcap (SAGE) architectures with gate-all-around devices above insulator substrates, are described. In an example, an integrated circuit structure includes...
简单来说说,SAC工艺就是在栅极gate上方添加一层保护性介电层,目的是防止源,漏极的contact与栅极gate短路。主要原因是当时contact的pitch越来越小,source/drain contact很容易发生偏移,造成与gate短路,最终导致low yield。 Intel在其22nm FinFET工艺中首先推出SAC flow,主要是添加了三个步骤,具体流程如下: ...
A Novel Self-Aligned 4-Bit SONOS-Type Nonvolatile Memory Cell With T-Gate and I-Shaped FinFET Structure We propose a novel 4-bit self-aligned SONOS-type nonvolatile memory (NVM) cell with a T-gate and I-shaped FinFET structure for practical implementation wit... S Lee,WJ Yong,TJK Liu...
We demonstrate a nonvolatile single transistor ferroelectric gate memory device with ultra-thin (5.5 nm) Hf0.8Zr0.2O2 (HZO) fabricated using a self-aligned gate last process. The FETs are fabricated using silicon-oninsulator (SOI) wafers, and the ferroelectric is deposited with atomic layer depos...
The device further includes a gate dielectric layer disposed on the surface of the porous layer, wherein the gate dielectric layer is disposed between the plurality of substantially rod-shaped structures. The device still further includes a conductive layer selectively disposed on the surface of the...
Intel标准工艺形成metal gate metal gate向下凹陷 向下凹陷的区域中填充氮化硅etch stop layer然后CMP磨平 然后覆盖一层氧化硅 最后进行contact patterning 最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain的contact overlaid on metal gate上,由于氮化硅介电质存在,也不至于短路,这样就大...
Self-aligned gate endcap (SAGE) architectures having local interconnects, and methods of fabricating SAGE architectures having local interconnects, are described. In an example, an
A self-aligned gate-all-around metal-oxide-semiconductor (MOS) transistor technology is proposed and demonstrated. The self-aligned structure is realized b... S Zhang,R Han,H Wang,... - Electrochemical and Solid-State Letters 被引量: 10发表: 2004年 Fabrication of Highly Scaled Silicon Nanowir...