网络自对准栅 网络释义 1. 自对准栅 这些晶体管使用纳米线作为自对准栅(self-aligned gate),这个元件可切换晶体管的各种状态。但这种方法的可扩展性仍然是 … www.techreviewchina.com|基于7个网页
self-aligned-gate-mos网络自对准栅金属氧化物半导体 网络释义 1. 自对准栅金属氧化物半导体 电器电子专业英语词汇 ... self aligned gate mos 自对准栅金属氧化物半导体 self aligned injector 自对准注入器 ... www.chuandong.com|基于25个网页© 2025 Microsoft 隐私声明和 Cookie 法律声明 广告 帮助 反馈...
The blocking layer is selectively etched without substantially etching the hard mask in the gate area, to expose the gate layer surrounding the gate area. The exposed gate layer is etched to define a gate in the gate area. The hard mask remains on the gate, and functions as an electrical ...
6) grooved gate mos transistor v型栅金属氧化物半导体晶体管补充资料:N沟道金属-氧化物-半导体集成电路 以N沟道 MOS场效应晶体管为基本元件的集成电路,简称NMOS。NMOS电路于1972年才研制成功。NMOS电路发展的主要困难,是在普通的工艺条件下NMOS电路所用的衬底材料P型硅表面容易自然反型或接近反型,因而难以制成...
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices, and methods of fabricating self-aligned gate endcap (SAGE) architectures with g... B Guha,W Hsu,LP Guler,... 被引量: 0发表: 2022年 High-Performance Silicon Nanowire Gate-All-Around nMOSFETs Fabricated on Bulk Subst...
Self-aligned gate and methodSelf-aligned gate and method 申请(专利)号: US20000733243 申请日: 2000-12-07 专利号: US6774001B2 公开公告日: 2004-08-10 主分类号: H01L213/36 分类号: H01L213/36 申请权利人: STMICROELECTRONICS, INC. 发明设计人: ROBERT LOUIS HODGES 公开国代码: US 申请国代码:...
Self-aligned gate endcap (SAGE) architectures having local interconnects, and methods of fabricating SAGE architectures having local interconnects, are described. In an example, an
self-aligned gate 1 Articles Federico Faggin: The Real Silicon Man June 19, 2018bySteven Dufresne45 Comments While doing research for our articles aboutinventing the integrated circuit,the calculator, andthe microprocessor, one name kept popping which was new to me, Federico Faggin. Yet this was...
3) self aligned schottky fet 自对准肖特基栅场效应晶体管 例句>> 4) grid field effect transistor 栅场效应晶体管 例句>> 5) bipolar photo gate FET 双极光栅场效应晶体管 6) dual material gate field effect transistor(DMG MOSFET) 异质双栅场效应晶体管 ...
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices, and methods of fabricating self-aligned gate endcap (SAGE) architectures with gate-all-around devices, are described. In an example, an integrated circuit structure includes a semiconductor fin (1004) above a substrate (10...