Schottky-barrier diodes/ p-type diodesSchottky-diode barrier heightI-V measurementflat-band barrier heightideality factorsprocessing conditionsPtSi/ B2560H Junction and barrier diodes B2530D Semiconductor-metal interfaces/ PtSi/int Pt /int Si/int PtSi/bin Pt /bin Si/bin...
3.2 Schottky barrier height measurement Diamond-metal interfaces and their properties as electrical contacts have received recent attention, and both ohmic and rectifying contacts to both natural diamond and CVD-grown diamond have been reported [6,17–21]. To fully understand the rectifying contact it...
摘要原文 We present the Schottky-barrier height determination for the Fe/ZnSe(001) system performed by core and valence level photoelectron emission spectroscopy. Above the thickness of 2 ML, the Fe–Fermi level position is stabilized at 1.6 eV above the valence-band maximum of the n-type undop...
A capacitance-voltage (C-V) method was developed to extrapolate the Schottky barrier height on n-GaN with exponential carrier concentration profile. The carrier concentration profile of the unintentionally doped GaN was determined by C-V measurement to be exponential. On the basis of this profile,...
The Schottky barrier height at the metal/BP interface can be extracted from the temperature dependent I–V measurements and analyzed using the thermionic emission equation41, which can be expressed as IDS = AA⁎ T 2exp− q kBT ΦB − VDS n ...
The leak- age current of our measurement system was a few picoamperes during the temperature-dependent I–V measurements, comparable with the current level at negative applied voltage; accordingly, we focused our attention on the temperature-dependent I–V measurements under the positive applied ...
[求助]如何用VASP计算半导体的 ionization potential和Schottky Barrier Height 查到小木虫上面给出的IP=E...
查到小木虫上面给出的IP=E（M+）-E（M），但是计算出来的值是负值，文献给出来的是负值。因为计算...
1) Schottky barrier height 肖特基势垒高度 1. The result shows thatSchottky barrier heightdecreases , ideal factor increases and surface condition of contacts degenerates when annealing temperature increases for unintentional doped GaN. 实验结果表明,在非故意掺杂的样品上,随退火温度的升高,肖特基势垒高度下降...
As a result, a strong band bending occurs at the silicide-silicon interface giving rise to a lowering of the effective Schottky barrier height. In turn, an increased electron as well as hole injection into the channel leads to improvements of the off- and on-state of the SB-MOSFETs. Using...