必应词典为您提供schottky-barrier-height的释义,网络释义: 肖特基势垒高度;萧特基能障高度;萧基位障高度;
1) Schottky barrier height 肖特基势垒高度 1. The result shows thatSchottky barrier heightdecreases , ideal factor increases and surface condition of contacts degenerates when annealing temperature increases for unintentional doped GaN. 实验结果表明,在非故意掺杂的样品上,随退火温度的升高,肖特基势垒高度下降...
Electron Affinity and Schottky Barrier Heightelectron affinityno‐barrier electron emissionSchottky barrierSchottky–Mott contactband‐gap energysurface reconstructionexternal perturbation effectdoi:10.1002/0470090340.ch9John Wiley & Sons, Ltd
The Schottky barrier height refers to the energy difference between the metal and the semiconductor in a Schottky diode. It has been extensively studied and found to vary for different metals, even though it does not scale proportionally with the metal work function. ...
Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I - V - T Technique. Jiang Yu-Long,Ru Guo-Ping,Lu Fang,Qu Xin-Ping,Li Bing-Zong,Li Wei,Li Ai-Zhen. Chinese Physics . 2002蒋玉龙,茹国平,陆昉,屈新萍,李炳宗,李伟,李爱珍. Schottky Barrier Height Inhomogeneity of Ti/...
Schottky barrier heightMOCVDWe describe the use of n- and p-type delta-doping layers in n-InGaAs for Schottky barrier enhancement. The delta-doping layers are introduced by MOCVD using silicon and zinc dopants respectively. From current-voltage characteristics of Au/InGaAs diodes measured at room ...
In this paper we demonstrate the use of dopant segregation during silicidation for decreasing the effective potential barrier height in Schottky-barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs). N-type as well as p-type devices are fabricated with arsenic/boron implanted into ...
Mohamed M, Irmscher K, Janowitz C, Galazka Z (2012) Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3. Appl Phys Lett 101(13):132106Schottky barrier height of Au on the transparent semiconducting oxide beta-Ga2O3. M. Mohamed,K. Irmscher,C. Jan...
查到小木虫上面给出的IP=E（M+）-E（M），但是计算出来的值是负值，文献给出来的是负值。因为计算...
Current transport and Schottky barrier height analysis on InAlN/GaN structures with thermally oxidized InAlN surface (800°C, 1 min) was performed. From the current-voltage characteristics measured at various temperatures (300–820 K) and their approximation by various current mechanisms, it follows ...