CONSTITUTION:In a Schottky barrier type field-effect transistor, a GaAs operating layer 4 provided with a recess structure is provided to a semi-insulating GaAs substrate 5, a source electrode and a drain electrode 3 are provided onto the surface of the operating layer on the sides of the ...
S. Jang, “Schottky Barrier Effects in The Electronic Conduction of Sol-Gel derived Lead Zirconate Titanate Thin Film Capacitors,” Journal of Applied ... Yang,S Y.,Lee,... - 《Journal of Applied Physics》 被引量: 0发表: 1998年 Schottky barrier effects in the electronic conduction of sol...
肖特基势垒(Schottkybarrier) 金属和半导体接触形成半导体表面势垒,此势垒又称肖特基势垒。 这篇肖特基势垒(Schottkybarrier)百科全说物理篇,你推荐给朋友了么? 【肖特基势垒(Schottkybarrier)百科全说物理篇】相关文章: ★热桥(heatbridge)物理中学生百科 ★脉管循环制冷机(pulsetuberefrigerator)物理初中年级知识 ...
Schottky barrier effect. A Schottky barrier is generally formed at the ferroelectric/electrode interface, and the barrier height and width can be modulated by polarization. The built-in field (Ebi) in the depletion region provides the driving force for the PV effect30,31,32,33,34,35, similar ...
wide band gap semiconductors/ gate buffer layerSchottky barrier field effect transistorMESFETdrain currentsmall signal parameter通过在栅极和沟道层间插入一层低掺杂的缓冲层研究了其对肖特基势垒场效应晶体管性能的影响.通过求解一维和二维泊松方程,得到了电流和小信号参数与缓冲层厚度和浓度的依赖关系.当缓冲层厚度...
Schottky barriergas sensors exploit an effect that occurs at the interface between two materials, usually a metal and a semiconductor. This effect, named afterSchottky (1939), consists in the formation of a potential barrier that can follow the leveling of theFermi levelswhen two materials are br...
A Schottky barrier gate field effect transistor is capable of operating in the enhancement mode. The transistor includes a gallium arsenide layer formed on a substrate. The relationship between the thickness W and impurity concentration N of the gallium arsenide layer is given by the expression收藏...
Schottky barrier controls the transfer of hot carriers between contacted metal and semiconductor, and decides the performance of plasmonic metal–semiconductor devices in many applications. It is immensely valuable to actively tune the Schottky barrier.
Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling Wong, “Schottky-barrier carbon nanotube field effect transistor modeling,” IEEE Transactions on Electron Devices , vol. 54, pp. 439–445, 2007. View ... A Hazeghi,T Krishnamohan,HSP Wong - 《IEEE Transactions on Electron Devices...
A Schottky-barrier field-effect transistor is disclosed with a semiconductor channel of relatively low conductivity between the source and drain electrodes which may be electrically influenced by a Schottky-barrier gate electrode located on the semiconductor channel. The transistor is characterized by a ...