Magnetron RIE dry etching methodPURPOSE: To carry out a dry etching process without producing metal deposits or redeposits on a wafer by a method wherein the input and stoppage of microwaves are periodically repeated.齋藤 由理恵
“日本Samco干法刻蚀机,等离子刻蚀,RIE ,ICP Dry Etching”详细介绍 等离子刻蚀系统 用于高精度加工各种半 导体和绝缘膜的刻蚀装置。利用独自 的电子线圈,生成高密度均一的等离 子。可根据加工材料和目的不同,选 择相应的等离子。 设备特点: 通过Tornado ICP,可产生稳定高密度的等离子,进行高选择比高精度刻蚀。
Inductively coupled plasma (ICP) cryogenic dry etching was used to etch submicron pores, nano contact lines, submicron diameter pillars, thin and thick cantilevers, membrane structures and anisotropic deep structures with high aspect ratios in silicon for bio-nanoelectronics, optoelectronics and nano-mic...
MAGNETRON RIE DRY ETCHING METHODPURPOSE: To carry out a dry etching process without producing metal deposits or redeposits on a wafer by a method wherein the input and stoppage of microwaves are periodically repeated.SAITOU YURIE齋藤 由理恵...
Dry etching of AlSb and Al0.80Ga0.20Sb has been performed by inductively coupled plasma/reactive ion etching based on a (Cl2:Ar) gas mixture without addition of BCl3. The dry etch process has been used to fabricate AlSb/InAs high electron mobility transistors isolated by a shallow mesa...
MAGNETRON RIE DRY ETCHING METHODPURPOSE: To carry out a dry etching process without producing metal deposits or redeposits on a wafer by a method wherein the input and stoppage of microwaves are periodically repeated. ;CONSTITUTION: Reactive gas is turned into plasma by microwaves and activated ...
PURPOSE: To execute excellently etching of a contact hole of which the area to be etched is small, and the like, and also to execute etching of line and space for which the area to be etched is large, overall etch-back and the like with excellent uniformity within a surface to be ...
Self assembled micro masking effect in the fabrication of SiC nanopillars by ICP-RIE dry etching. Appl Surf Sci 2011;257:3850-5.Kathalingam A, Kim MR, Chae YS, Sudhakar S, Mahalingam T, Rhee JK. Self- assembled micro-masking effect in the fabrication of SiC nanopillars by ICP- RIE dry...
PURPOSE: To increase an etching rate and improve anisotropic etching and a resolution by conducting an RIE dry etching, using O/He gas which is O gas added with He gas and diluting a sililating agent with air or N in a sililation process of a photosensitive film.KWON KWANG-HO...
GaN-based striped structures were fabricated using Al_(0.2)Ga_(0.8)N/GaN single heterostructure by combination of dry/wet etching with taking into account GaN crystal structure. After following wet-etching, the sidewalls of striped structures along the < 1120 > direction became very smooth and ...