Accordingly, in order to form a contact layer after etching process, the addition of N2 and O2 is stopped immediately before finishing the etching process while the etching process is performed using the plasma of a gas of a pure halogen gas or halogen-containing gas so as to improve the ...
参考资料 1. Clean Mode Al Etch Process Development for Defect Reduction 4. Aluminium Etching: A Cost-Effective Method - Precision Micro 5. PDF WET-CHEMICAL ETCHING OF METALS - MicroChemicals GmbH 6. [PDF] Aluminium Etching - MicroChemicals [2013-11-07] 8. Plasma etching of aluminum | IEEE ...
20、的是干法刻 蚀中 RIE 模式(Reactive Ion Etching Mode ),下图是 TEL (Tokyo Electron Limited ) 生产的干刻机的简单示意图。其设备的主体是工艺腔室(Process Chamber ),其他的辅助设备有产生工艺必需 的真空之真空泵(Pump ),调节极板和腔体的温度之调节器(Chiller),判断刻蚀 终点之终点检测器(EPD, End-...
在TFT-LCD制造过程中,Island,Channel和Contact的刻蚀一般使用的是干法刻蚀中RIE模式(Reactive Ion Etching Mode),下图是TEL(Tokyo Electron Limited)生产的干刻机的简单示意图。 其设备的主体是工艺腔室(Process Chamber),其他的辅助设备有产生工艺必需的真空之真空泵(Pump),调节极板和腔体的温度之调节器(Chiller),判...
PURPOSE:To perform the dryetching process while improving the ionization efficiency by a method wherein opposing flat plate electrodes are connected to a high frequency power supply so that both electrodes may become cathodes while the supplied high frequency is provided with the phase difference of ...
Dry-etching process 专利名称：Dry-etching process 发明人：GOBRECHT, JENS, DR.,ROSSINELLI, MARCO, DR.申请号：EP85104927.0 申请日：19850423 公开号：EP0166893B1 公开日：19890118 专利内容由知识产权出版社提供 摘要：in a trocken\u00e4tzverfahren for structuring a substrate (2), a aetzmaske (4)...
A process for forming deep trenches on a surface of a semiconductor substrate by forming a mask on the surface of the semiconductor, which prescribes the position of the trenches; and then dry etching the semiconductor surface using a gas mixture comprising (1) an etchant, bromine containing,...
在TFT-LCD制造过程中,Island,Channel和Contact的刻蚀一般使用的是干法刻蚀中RIE模式(Reactive Ion Etching Mode),下图是TEL(Tokyo Electron Limited)生产的干刻机的简单示意图。其设备的主体是工艺腔室(Process Chamber),其他的辅助设备有产生工艺必需的真空之真空泵(Pump),调节极板和腔体的温度之调节器(Chiller),判断...
(二)、深宽比依赖性蚀刻(ARDE:Aspect Ratio Dependent Etching): 补充: (三)、宏观负载效应(Macro Loading effect) 九、Plan Dry etch常见profile类型、产生原理及相关改善方法 写在前面 Dry etch工艺过程中,我们所需传递的pattern多为line、trench、hole等。一般情况下,我们期望得到比较垂直的profile,但因为工艺过程...
化学干法刻蚀：Chemicaldryetching(alsocalledvaporphaseetching)doesnotuseliquidchemicalsoretchants.Thisprocessinvolvesachemicalreactionbetweenetchantgasestoattackthesiliconsurface.Thechemicaldryetchingprocessisusuallyisotropicandexhibitshighselectively.Anisotropicdryetchinghastheabilitytoetchwithfinerresolutionandhigheraspectratio...