The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick AlOfilm to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film an AlOfilm , an Ru film , an SiOfilm and ...
The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al<Sub>2</Sub>O<Sub>3 </Sub>film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al<Sub>...
Al2O3 dry etching was done in an Applied Materials mxP capacitively coupled plasma (CCP) reactor, using Ar/BCl3 gas chemistry with 80/50 sccm, 50 mTorr and 500 W platen power. Prior to this process, the chamber was conditioned using the same process with two blanket resist wafers. The...
The polysilicon was patterned with EB or photolithography us- ing dry etching. The minimum gate length, LCAD, was 50 nm. After extension and pocket implanta- tion, if needed, a side wall of the polysilicon gate was formed and source/drain/gate implantation 95 Y. Sugiyama et al.: ...
Dry Etching for VLSI (1991) R. Doering et al. Handbook of Semiconductor Manufacturing Technology (2000) N. Ito et al. Reduction of particle contamination in plasma-etching equipment by dehydration of chamber wall Jpn. J. Appl. Phys. I (2008) M. Schaepkens et al. Influence of reactor wall...
The matrix dry-pressed under the pressure of 20 MPa had a porosity of 16.7% and could be easily processed by computer aided design and computer aided manufacturing (CAD/CAM), and which had been infiltrated by the La2O3–Al2O3–SiO2 glass at 1200 °C for 4 h. The flexural strength ...
J.M. Shockley, S. Descartes, P. Vo, E. Irissou, and R.R. Chromik, The Influence of Al2O3Particle Morphology on the Coating Formation and Dry Sliding Wear Behavior of Cold Sprayed Al–Al2O3Composites,Surf. Coat. Technol., 2015,270, p 324–333. ...
chemical vapor deposition on a 4H-SiC substrate. Fig. 1 shows the process flow of the conventional ohmic contact and the proposed ohmic contact with the Al2O3particles. The AlGaN/GaN structure was etched by a dry etching technique to define the isolated active region of the transfer length ...
Among these methods, there are some methods that, although initially efficient such as “flame polishing”, etching, thin coating, cladding they are transient since they do not produce a permanent effect of increase of the mechanical strength, that is, the glass parts when placed in service are...
The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick AlOfilm to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an AlOfilm 14, an Ru film 13, an SiO...