S. Lee, S. Kim, “Al2O3 Nanotubes Fabricated by Wet Etching of ZnO/Al2O3 Core/Shell Nanofibers”, Adv. Mater, 16, 422 (2004) :Hwang, J. ; Min, J. S. L. ; Keem, K. ; Cho, K. Y. ; Sung, M. Y. ; Lee, M. S. ; Kim, S., Al2O3 Nanotubes Fabricated by Wet ...
The polysilicon was patterned with EB or photolithography us- ing dry etching. The minimum gate length, LCAD, was 50 nm. After extension and pocket implanta- tion, if needed, a side wall of the polysilicon gate was formed and source/drain/gate implantation 95 Y. Sugiyama et al.: ...
In general, Al2O3can be prepared by solution (wet) chemistry6,7,8,9,10or, as shown in recent years, via atomic layer deposition (ALD)11,12,13,14. Al2O3ALD is a well-established process, usually consisting of two half-reaction steps using trimethylaluminum (TMA) and H2O, respectively...
Yong, Metal-foam-structured Ni-Al2O3 catalysts: wet chemical etching preparation and syngas methanation performance, Appl. Catal. A Gen. 510 (2016) 216-226.Li, Y.; Zhang, Q.; Chai, R.; Zhao, G.; Cao, F.; Liu, Y.; Lu, Y. Metal-foam-structured Ni-Al2O3 catalysts: Wet ...
Yong, Metal-foam-structured Ni-Al2O3 catalysts: wet chemical etching preparation and syngas methanation performance, Appl. Catal. A Gen. 510 (2016) 216-226.Li, Y.; Zhang, Q.; Chai, R.; Zhao, G.; Cao, F.; Liu, Y.; Lu, Y. Metal-foam-structured Ni-Al2O3 catalysts: Wet ...
Antireflective nanostructuresLow-cost wet etchingALDIn this paper, manganous nitrate [Mn(NO3)2] was used to assist the etching of silicon wafer in hydrofluoric acid (HF) for the antireflective application, and alumina (Al2O3) layer was deposited on the surface of the etched sample by atomic...
In order to examine the electrical and physical properties of Al 2 O 3 layers with dual thickness on a chip, Pt gate/Al 2 O 3 with dual thickness/p-type Si (100) samples were fabricated using atomic-layer deposition, separation photolithography, and 100:1 HF wet etching to remove the ...
S. K. Hong et al., " Evaluation of Nanopipes in MOCVD Grown (0001) GaN/Al2O3 By Wet Chemical Etching ", Elsevier, Journal of Crystal Growth, vol. 191, pp. 275-278, 1998.S. K. Hong et al., " Evaluation of Nanopipes in MOCVD Grown (0001) GaN/Al2O3 by Wet Chemical Etching...
Yong, Metal-foam-structured Ni-Al2O3 catalysts: wet chemical etching preparation and syngas methanation performance, Appl. Catal. A Gen. 510 (2016) 216-226.Li, Y.K.; Zhang, Q.F.; Chai, R.J.; Zhao, G.F.; Cao, F.H.; Liu, Y.; Lu, Y. Metal-foam-structured Ni-Al2O3 ...
Photoassisted wet chemical etching of cubic GaN (c-GaN) on GaAs(001) epilayers grown by metalorganic vapor phase epitaxy (MOVPE) is investigated.Compared with the etching of hexagonal GaN (h-GaN) grown on Al_2O_3(0001),it is found that the photoassisted wet etching behavior of c-GaN ...