PSMN4R0-30YL N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb S S S G D Pinning information Symbol Description source source source gate mounting base; connected to drain mbb076 Simplified outline ...
PSMN4R0-30YL115 Type MOSFET Brand Name Original brand Package Type Surface Mount Other attributes Mounting Type SMT/SMD Description MOSFET Place of Origin Original Package / Case standard Operating Temperature Standard Series all type of transistor D/C NEW Application MOSFET driver Supplier Type orig...
Nexperia PSMN4R0-30YL,115 封装/规格: SOT669, MOS管 N-channel Id=100A VDS=30V SOT669。你可以下载 PSMN4R0-30YL,115 中文资料、引脚图、Datasheet数据手册功能说明书,资料中有 MOSFETs 详细引脚图及功能的应用电路图电压和使用方法及教程 手机版: PSMN4R0-30YL,115...
PSMN4R0-30YL,115 N-沟道 30 V 4 mOhm 36.6 nC 表面贴装 逻辑电平 MOSFET - LFPAK PSMN4R0-30YL,115 数据手册 ECAD模型: 制造商: Nexperia 标准包装: Product Variant Information section 1500/卷盘 Date Code: 2328 Product Specification Section Nexperia PSMN4R0-30YL,115 - 产品规格 发货信...
PSMN4R0-30YL 4R030 的参数 最大源漏极电压Vds Drain-Source Voltage 30V 最大栅源极电压Vgs(±) Gate-Source Voltage 20V 最大漏极电流Id Drain Current 76A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 开启电压Vgs(th) Gate-Source Threshold Voltage 耗散功率Pd Power...
PSMN4R0-30YL115 Place of Origin Taiwan, China Brand Name other RoHS standard RoHS Compliant manufacturer Original factory Chip parameters provide encapsulation standard Part status Original brand new Date Code newest Product status On sale Warehouse Shenzhen Hong Kong Delivery date Immediate delivery Pac...
制造商编号PSMN4R0-30YL 商品别名PSMN4R0-30YL,115 制造商Nexperia(安世) 授权代理品牌 唯样编号F-PSMN4R0-30YL 供货TME代购 无铅情况/RoHs无铅/符合RoHs 描述 FET类型:N-Channel 数据手册 PDF资料下载 暂无数据 参数信息常见问题 参数有误? 技巧:勾选主要参数,留空一些可替代的参数,点击查看相似商品,即可快...