A positive-tone photoresist is provided. The photoresist comprises a polymer, a photoactive agent, and a dissolution inhibitor. The dissolution inhibitor comprises a compound of Formula I: ##STR1## wherein R.sub.1 is a C.sub.1 -C.sub.20 alkyl, cyclo alkyl, benzyl, phenyl, alkyl ...
The frozen film works as a positive‐tone photoresist. When the frozen PPaP is irradiated with light containing a wavelength much shorter than 300 nm, the ester structure of the exposed region is decomposed by photo‐chemically generated acid and dissolved in an alkaline solution. Furthermore, a...
Ultra Thick Film High Sensitivity g-line Standard Positive-tone Photoresist 超厚膜,高对比度,高感光度正型光刻胶, 适用于半导体制造及GMR磁头制造 Ultra-thick film high contrast and high speed positive-tone standard photo resist for semiconductor and/or GMR head manufacturing processes. ...
A new supercritical carbon dioxide (scCO2) developable, chemically amplified positive-tone photoresist is introduced by silylation of poly(tetrahydropyranyl methacrylate-co-1H,1H-dihydroperfluorooctyl methacrylate) block and random copolymers following lithographic patterning by 248-nm irradiation. High-resolu...
A positive-tone photoresist is provided. The photoresist comprises a polymer, a photoactive agent, and a dissolution inhibitor. The dissolution inhibitor comprises a compound of Formula I: ##STR1## wherein R1is a C1-C20alkyl, cyclo alkyl, benzyl, phenyl, alkyl substituted cyclo alkyl, alkoxy ...
The copolymers of the present invention positive-tone photoresist composition have excellent coating and soften properties, where issues related to cracking of resist pattern are fully resolved. In addition other properties such as resolution, etching resistance, and ink removing properties also correspond...
A process is disclosed by which a positive tone photoresist is obtained without a solvent development step. The resist is a polymer containing masked reactive functionality which is imagewise exposed to radiation to unmask the functionality then treated with a non-organometallic reagent to remask that...
We apply the protocol to a p-t-butyloxycarbonyloxystyrene/bis(t-butylphenyl)iodonium perfluorobutanesulfonate positive-tone photoresist system. The resulting kinetics measurements show that diffusion is environment sensistive and describable with two limiting diffusion coefficients. The Arrhenius parameters ...
A liquid phase (wet) silylation process has been developed1 using the commercial photoresist AZ 5214TM, and I-line lithography. Here, the process is characterized using proton NMR (Nuclear Magnetic Resonance) spectroscopy, and SEM analysis of fabricated submicron patterns.E....
This paper reports on the results of the use of resolution enhancement techniques in combination with an advanced deep ultraviolet (DUV) photoresist on an ASML PAS5500/300 stepper (maximum numerical aperture (NA) = 0.63. The performance of 0.15 and 0.13 μm features will be evaluated using opti...