A positive-tone photoresist is provided. The photoresist comprises a polymer, a photoactive agent, and a dissolution inhibitor. The dissolution inhibitor comprises a compound of Formula I: ##STR1## wherein R 1 is a C 1 -C 20 alkyl, cyclo alkyl, bensyl, phenyl, alkyl substituted cyclo ...
The frozen film works as a positive‐tone photoresist. When the frozen PPaP is irradiated with light containing a wavelength much shorter than 300 nm, the ester structure of the exposed region is decomposed by photo‐chemically generated acid and dissolved in an alkaline solution. Furthermore, a...
Ultra Thick Film High Sensitivity g-line Standard Positive-tone Photoresist 超厚膜,高对比度,高感光度正型光刻胶, 适用于半导体制造及GMR磁头制造 Ultra-thick film high contrast and high speed positive-tone standard photo resist for semiconductor and/or GMR head manufacturing processes. ...
A new supercritical carbon dioxide (scCO2) developable, chemically amplified positive-tone photoresist is introduced by silylation of poly(tetrahydropyranyl methacrylate-co-1H,1H-dihydroperfluorooctyl methacrylate) block and random copolymers following lithographic patterning by 248-nm irradiation. High-resolu...
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A process is disclosed by which a positive tone photoresist is obtained without a solvent development step. The resist is a polymer containing masked reactive functionality which is imagewise exposed to radiation to unmask the functionality then treated with a non-organometallic reagent to remask that...
A positive-tone photoresist is provided. The photoresist comprises a polymer, a photoactive agent, and a dissolution inhibitor. The dissolution inhibitor comprises a compound of Formula I: ##STR1## wherein R1is a C1-C20alkyl, cyclo alkyl, benzyl, phenyl, alkyl substituted cyclo alkyl, alkoxy ...
New series of chemically amplified, single layer, positive tone photoresists for 193 nm lithography have been developed. These resists were formulated from a series of cycloaliphatic co- and terpolymers of 2-methyl propyl bicyclo(2.2.1)hept-2- ene-5-carboxylate (carbo-tert-butoxynorbornene), bic...
This paper reports on the results of the use of resolution enhancement techniques in combination with an advanced deep ultraviolet (DUV) photoresist on an ASML PAS5500/300 stepper (maximum numerical aperture (NA) = 0.63. The performance of 0.15 and 0.13 μm features will be evaluated using opti...
Simulations of the dissolution process are used to predict line shapes as a function of local extent of polymer deprotection in chemically amplified positive tone photoresists and examine chemical factors that lead to roughening. The results show that nonlinearities inherent in the dissolution kinetics ...