PMOS管技术资料AO3401 Symbol Typ Max 659085125R θJL 4360 °C/W Maximum Junction-to-Ambient A Steady-State °C/W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s R θJA AO3401 Alpha & Omega Semiconductor, Ltd.
AO3407 SOT-23-3L PMOS Vds-30V 规格书AO推荐
PMOS管技术资料AO3401.pdf,July 2001 AO3401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3401 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), low gate charge and ID = -4.2 A operation wi
V GS =0V -1 IDSS Zero Gate Voltage Drain Current μA T =55°C -5 J IGSS Gate-Body leakage current V DS =0V, V GS =±20V ±100 nA VGS(th) Gate Threshold Voltage V =V I =-250 μA -1 -1.8 -3 V DS GS D ID(ON) On state drain current VGS =-4.5V, V DS =-5V -10...
Id + L Vds BV Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds DSS 2 E = 1/2 LI AR AR Vdd Vgs Vgs Rg DUT - + VDC Vgs Id Vgs I Ig Vgs - + VDC DUT L Vgs Vds Isd Isd Diode Recovery Test Circuit & Waveforms ...
AO3403 SOT-23-3L PMOS Vds-30 规格书AO推荐
PMOS Vds-30V 规格书AO推荐 Symbol t ≤ 10s Steady-State Steady-State R θJL °C/W R θJA 7010090°C Thermal Characteristics Units Parameter Typ Max V Units V A W Maximum Junction-to-Lead °C/W °C/W Maximum Junction-to-Ambient A D 6312580Maximum Junction-to-Ambient A ...
Tsuprem4使用介绍 MEDICI使用介绍 * 电路级仿真(续5) PLOT.1D X.AX=TIME Y.AX=VC(1) COLOR=2 POINTS + TITLE= VIN vs TIME“ PLOT.1D X.AX=TIME Y.AX=I(PIGBT.Drain) COLOR=2 + POINTS TITLE=ID vs Time */140 工具简介 Tsuprem4使用介绍 MEDICI使用介绍 * T4 作业要求 用T4仿真出一个NMOS。