Best via and trench profiles are obtained for a 25/5 nitrogen-to-oxygen ratio; no undercut of the hard mask is observed at a good etch rate. The feasibility of via filling with a low temperature W process and Cu fill of the trenches in a damascene structure has been demonstrated....
Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch. J. Vac. Sci. Technol. B 1999, 17, 1435–1447. [CrossRef] 31. Baggetto, L.; Mohanty, D.; Meisner, R.A.; Bridges, C.A.; Daniel, C.; Wood III, D.L.; Dudneya, N.J.; Veith, G.M....