Reduced Reverse Gate Leakage Current for p‐GaN Gate HEMTs by a Surface‐Etching MethodHEMTleakage currentpassivationp‐GaNsurface‐etchingIn this paper, we have investigated the mechanism of increased gate leakage current observed in SiNx﹑assivated HRCL〩EMTs. The leakage was found to be ...
Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack In this paper, we report on AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) fabricated using ZrO2/Al2O3 as a gate dielectric stack. Gate leaka...
Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is embedded into the ohmic drain. This could realize not only the reverse blocking capability, but also the effective suppression of reverse leakage current based on the ...
In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under Short-Circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models). A strong drain current reduction (>70% after saturation peak) and high gate leakage current (tens of mA) are ...
We studied three different wafers having different Mg-doping concentration levels in the p-GaN, which correspond to different electric fields at the metal/p-GaN junction and different gate leakage current levels. For the first time we compare the device reliability from two different perspectives, ...
根据Stockman和 Posthuma等人的研究(On the origin of the leakage current in p‑gate AlGaN/GaN HEMTs,Arno Stockman et al.,2018IEEE IRPS Conference;Impact of Mg out‑ diffusion and activation on the p‑GaN gate HEMT device performance, N.E.Posthuma et al.,2016 28th ISPSD conference),pG...
相关工作以Improvement of Breakdown Voltage and on-Resistance in Normally-off AlGaN/GaN HEMTs Using Etching-Free p-GaN Stripe Array Gate为题发表在IEEE Trans. Electron Devices [1],论文的第一作者是中科院苏州纳米所博士生魏星,通讯作者为张宝顺研究员、蔡勇研究员。
Benefiting from the optimized material growth of high-resistivity buffer, effective Al 2 O 3 surface passivation with suppressed OFF-state leakage current, and proper management of the electric field on the p-GaN gate edge, the device with a gate–drain distance of $18.5~\mu ext{m}$ ...
DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer However, increased gate leakage current density and poor gate voltage swing in CBL FinHEMT is improved through a metal-oxide-semiconductor FinHEMT (FinMOS... A Chakra...
The threshold voltage was +1.6V, giving enhancement-mode, normally-off operation. With 8V gate potential and 1V drain bias, the drain current was 90mV/mm and the gate leakage 5x10-7mA/mm. The subthreshold swing was 90mV/decade.