DMG3415U P-CHANNEL 增强模式 MOSFET 数据手册说明书 DMG3415U Document number:DS31735 Rev. 13 - 3 1 of 7 www.diodes.com March 2018 © Diodes Incorporated P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ∙ Low On-Resistance ∙ Low Input Capacitance ∙ Fast Switching Speed...
P-Channel MOSFET P-Channel metal-oxide-semiconductor field-effect transistor using either Shichman-Hodges equation or surface-potential-based model expand all in page Libraries: Simscape / Electrical / Semiconductors & Converters Description The P-Channel MOSFET block provides two main modeling modeling...
描述:场效应管(MOSFET) 35W 55V 15A 1个P沟道 TO-252-2(DPAK) 国内价格 1+1.37500 100+1.05710 1250+0.89650 2500+0.75900 库存:240 去购买 型号:NCE55P15K 品牌:NCE/新洁能 封装:TO-252-2(DPAK) 描述: 国内价格 10+0.79520 库存:20000 去购买 型号:NCE55P15K 品牌:NCE(无锡新洁能) 封装:TO-252-...
NP3401MR南麟30V 4.2A P沟道MOS场效应管.pdf,NP3401MR 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3401MR uses advanced trench technology S to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as
P-Channel Enhancement Mode Power MOSFET Description The PED3008MA uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PED3008MA General Features ● VDS = -30V, ID = -36A RDS(ON) < 10mΩ @ VGS=-10V RDS...
www.vishay.com SPICE Device Model SiR871DP Vishay Siliconix P-Channel 100 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C to +125 °C ...
JMTL2301C Description JMT P-channel Enhancement Mode Power MOSFET Features VDS = -20V, ID = -3A RDS(ON) < 70mΩ @ VGS = -4.5V RDS(ON) < 100mΩ @ VGS = -2.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired ...
JMTG170C04D Description JMT N And P-Channel Enhancement Mode MOSFET Features N-Channel: 40V, 16A RDS(ON) < 20mΩ @ VGS = 10V RDS(ON) < 29mΩ @ VGS = 4.5V P-Channel: -40V, -16A RDS(ON) < 50mΩ @ VGS = -10V RDS(ON) < 65mΩ @ VGS = -4.5V Excellent...
Schematicdiagram MarkingandpinAssignment SOT-23topview PackageMarkingAndOrderingInformation DeviceMarkingDeviceDevicePackageReelSizeTapewidthQuantity MSP2301SOT-23Ø180mm8mm3000units AbsoluteMaximumRatings(TA=25℃unlessotherwisenoted) ParameterSymbolLimitUnit Drain-SourceVoltageVDS-20V Gate-SourceVoltageVGS±12V ...
STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data TAB 3 1 DPAK TAB 3 2 1 TO-220FP TAB 3 2 1 TO-220 IPAK 3 2 1 Figure 1. ...