DMG3415U P-CHANNEL 增强模式 MOSFET 数据手册说明书 DMG3415U Document number:DS31735 Rev. 13 - 3 1 of 7 www.diodes.com March 2018 © Diodes Incorporated P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ∙ Low On-Resistance ∙ Low Input Capacitance ∙ Fast Switching Speed...
mosfet沟道enhancementchannelmodegate PChannelEnhancementModeMOSFET -3.0A .kwaida KD2319SRG2009.Rev.1 DESCRIPTION KD2319SRGistheP-Channellogicenhancementmodepowerfieldeffecttransistoris producedusinghighcelldensity,DMOStrenchtechnology.Thishighdensityprocess isespeciallytailoredtominimizeon-stateresistance.Thesedevices...
Enhancement Mode MOSFET AP4P05AI RVE1.0 永源微電子科技有限公司 AP4P05AI -55V P-Channel Enhancement Mode MOSFET AP4P05AI RVE1.0 永源微電子科技有限公司 AP4P05AI -55V P-Channel Enhancement Mode MOSFET Package Mechanical Data-SOT23-XC-Single Symbol A A1 A2 b c D E E1 e e1 L L1 θ MIN...
P-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPP1433A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are...
1 NCE30P20Q http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P20Q uses advanced trench technology to provide excellent R DS(ON), low gate charge . This device is suitable for use as a load switch or in PWM applications.General Features ●V DS = ...
20V P沟道增强型MOSFET(MOS管).pdf,20V P-Channel Enhancement-Mode MOSFET VDS= -20V XP2301L RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ 3 RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ Features Advanced trench process technology 1 High Density Cell Design For Ultra Lo
SYNC Power SPP1413A P-Channel Enhancement Mode MOSFET handbook(1)(1)说明书用户手册.pdf,SYNCPowerSPP1413AP-ChannelEnhancementModeMOSFEThandbook(1)(1)说明书用户手册用户手册产品说明书使用说明文档安装使用手册现货库存、技术资料、百科信息、热点资讯,精彩尽在鼎
SPP3421 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3421 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are ...
20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20e to-263, Find Details and Price about Mosfet Power Mosfet from 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20e to-263 - Jiangsu Donghai Semiconductor Co.,Ltd
40V 6A N+P通道增强模式MOSFET-AP6G04S 6A 40V SOP-8L.pdf,AP6G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP6G04S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5