这使得 P 沟道 MOSFET 成为高边开关的理想之选。器件设计简洁,有利于在有限空间内打造低压驱动应用和非隔离 POL 产品。P 沟道 MOSFET 特性的一大优势在于可简化栅极驱动技术,这通常可降低整体成本。 P沟道功率MOSFET产品 英飞凌提供各种P沟道功率MOSFET电压。请在下面浏览我们的产品。
这使得 P 沟道 MOSFET 成为高边开关的理想之选。器件设计简洁,有利于在有限空间内打造低压驱动应用和非隔离 POL 产品。P 沟道 MOSFET 特性的一大优势在于可简化栅极驱动技术,这通常可降低整体成本。 P沟道功率MOSFET产品 英飞凌提供各种P沟道功率MOSFET电压。请在下面浏览我们的产品。
The P-Channel MOSFET block provides two main modeling modeling options: Based on threshold voltage — Uses the Shichman-Hodges equation to represent the device. This modeling approach, based on threshold voltage, has the benefits of simple parameterization and simple current-voltage expressions. Howev...
DMG3415U P-CHANNEL 增强模式 MOSFET 数据手册说明书 DMG3415U Document number:DS31735 Rev. 13 - 3 1 of 7 www.diodes.com March 2018 © Diodes Incorporated P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ∙ Low On-Resistance ∙ Low Input Capacitance ∙ Fast Switching Speed...
NP3401MR南麟30V 4.2A P沟道MOS场效应管.pdf,NP3401MR 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3401MR uses advanced trench technology S to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as
www.vishay.com SPICE Device Model SiRS4401DP Vishay Siliconix P-Channel 40 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the P-Channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C to +150 °C ...
Product Summary V(BR)DSS RDS(ON) max ID max -40V <9mΩ @ VGS = -10V <11mΩ @ VGS = -4.5V -40A View and Internal Schematic Diagram CQD04P11 40V P-CHANNEL MOSFET Description and Applications Trench Power MOSFET technology Low RDSON and Low Thermal Resistance. RoHS...
Typ. Max. Unit - -10 A - -40 A - -1.1 V - 20 ns - 17.8 nC - -1.8 A DocID022967 Rev 5 5/24 24 Electrical characteristics STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 2.1 Note: Electrical characteristics (curves) For the P-channel Power MOSFET, current and voltage polar...
0 评论次数: 0 文档热度: 文档分类: 幼儿/小学教育--教育管理 文档标签: msp2301摩矽p沟道mos管规格书 系统标签: 沟道mos规格draingatemillimeters -20V(D-S)P-ChannelEnhancementModePowerMOSFET GeneralFeatures ●V DS =-20V,I D =-3A R DS(ON) <140mΩ@V GS =-2.5V R DS(ON) <110mΩ@V GS...
P-Channel Enhancement Mode Power MOSFET Description The PED3008MA uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PED3008MA General Features ● VDS = -30V, ID = -36A RDS(ON) < 10mΩ @ VGS=-10V RDS...