这使得 P 沟道 MOSFET 成为高边开关的理想之选。器件设计简洁,有利于在有限空间内打造低压驱动应用和非隔离 POL 产品。P 沟道 MOSFET 特性的一大优势在于可简化栅极驱动技术,这通常可降低整体成本。 P沟道功率MOSFET产品 英飞凌提供各种P沟道功率MOSFET电压。请在下面浏览我们的产品。
这使得 P 沟道 MOSFET 成为高边开关的理想之选。器件设计简洁,有利于在有限空间内打造低压驱动应用和非隔离 POL 产品。P 沟道 MOSFET 特性的一大优势在于可简化栅极驱动技术,这通常可降低整体成本。 P沟道功率MOSFET产品 英飞凌提供各种P沟道功率MOSFET电压。请在下面浏览我们的产品。
A type of MOSFET in which the channel is composed with a majority of charge carriers as holes is known as p channel MOSFET. Once this MOSFET is activated, then the majority of charge carriers like holes will move throughout the channel. This MOSFET is in contrast to N channel MOSFET becau...
PROBLEM TO BE SOLVED: To increase the switching speed and to reduce the switching loss by turning on and off a P channel MOSFET which has its source and drain connected between a DC power terminal and an output terminal by using a predrive transistor (TR), a TR, a diode, and plural ...
The P-Channel MOSFET block models five types of fault: Open circuit— Failure due to metallization burnout Drain-source short— Failure due to avalanche breakdown on drain-source channel Drain-bulk short or source-bulk short— Failure due to avalanche breakdown on drain-bulk or source-bulk chann...
AOD413A 40V P-Channel MOSFET General Description The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V)...
P-Channel 200-V (D-S) MOSFET Si7119DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 200 1.05 at VGS = - 10 V 1.10 at VGS = - 6.0V ID (A) - 3.8e - 3.6e Qg (Typ.) 10.6 nC FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® ...
MOSFET – Dual, P-Channel, POWERTRENCH 30 V FDS4935A General Description This P−Channel MOSFET is a rugged gate version of onsemi's advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 20 ...
XT3415 SOT-23 Plastic-Encapsulate MOSFET(P-Channel) 1 SOT-23 产品特性总结Product Summary VDS -20V RDSON(@VGS= -4.5V) <45mΩ RDSON(@VGS= -3.3V) <55mΩ 根据客户要求打印 According to customer requirement 脚位定义Pin Definition P沟道20V漏-源电压MOS管 P-Channel 20V(D-S) Mosfet 特征 ...
channelPower MOSFETs(Polar TM andTrenchP TM ),coveringV DS rangeof -50Vto-600VandI D25 rangeof-10Ato-170A.Bothfami- liesofferbest-in-classperformanceinindustry-standardpower packagesandtheproprietaryISOPLUSfamilypackages.Fig.1 repeatsthesymbolsfortheMOSFETtypes. GateDrivinG DrivingaP-channelMOSFETis...