A type of MOSFET in which the channel is composed with a majority of charge carriers as holes is known as p channel MOSFET. Once this MOSFET is activated, then the majority of charge carriers like holes will move throughout the channel. This MOSFET is in contrast to N channel MOSFET becau...
AOD413A 40V P-Channel MOSFET General Description The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V)...
Each circuit symbol, as shown in Figure 10, has four terminals: the source. the gate, the drain, and the substrate, with the source and substrate being internally coupled. The N channel or electrons flow to the gate to form an N channel if the arrow points to the substrate; otherwi...
2SJ162 Symbol Footprint 2SJ162 Footprint 3D Model 2SJ162 3D Model 2SJ162 Description The2SJ162isa SiliconP ChannelMOSFETwith Current & Voltage Rating 7 ampere 160 volt respectively. 2SJ162 Feature lGood frequency characteristic lHigh-speed switching ...
The P-Channel MOSFET block models five types of fault: Open circuit— Failure due to metallization burnout Drain-source short— Failure due to avalanche breakdown on drain-source channel Drain-bulk short or source-bulk short— Failure due to avalanche breakdown on drain-bulk or source-bulk chann...
P-Channel 100-V (D-S) MOSFET Si7489DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.041 at VGS = - 10 V 0.047 at VGS = - 4.5 V PowerPAK SO-8 ID (A)a - 28 - 28 Qg (Typ.) 54 nC FEATURES • Halogen-free According to IEC 61249-2-21 Available • ...
www.vishay.com Si7463DP Vishay Siliconix P-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.0092 at VGS = -10 V -40 0.0140 at VGS = -4.5 V PowerPAK SO-8 ID (A) -18.6 -15 FEATURES • TrenchFET® Power MOSFETs • New low thermal resistance PowerPAK®...
NTVS3141PT2G ONSEMI 2900mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1.50 X 1 MM, 0.65 MM HEIGHT, LEAD FREE,CASE 499BC, FLIP CHIP-6 获取价格 NTVS3141P_09 ONSEMI −20 V, −3.7 A, 85 m, Single P−Channel, CSP 1.0x1.5x0.65 mm 获取价格 NTVS4101PT1 ON...
D DM 2 AP 10G04S RVE1.1 永源微電子科技有限公司 AP10G04S 40V N+P-Channel Enhancement Mode MOSFET P-Channel Electrical Characteristics (T =25 ℃, unless otherwise noted) J Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID -250uA -40 -44...
PROBLEM TO BE SOLVED: To increase the switching speed and to reduce the switching loss by turning on and off a P channel MOSFET which has its source and drain connected between a DC power terminal and an output terminal by using a predrive transistor (TR), a TR, a diode, and plural ...